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  1. No Access

    Article

    Submonolayer Quantum-Dot Based Saturable Absorber for Femtosecond Pulse Generation

    Semiconductor saturable absorber mirrors (SESAMs) enable passive modelocking of several ultrafast solid-state lasers. Conventionally, SESAMs in the 1-µm wavelength range have employed InGaAs quantum wells (QWs...

    S. J. Addamane, A. Laurain, C. W. Baker, T. J. Rotter… in Journal of Electronic Materials (2021)

  2. No Access

    Article

    InGaSb Defect Filter Layer to Improve Performance of GaSb Solar Cells Grown on GaAs Substrates

    The reduction of the threading dislocation density in metamorphic GaSb grown on GaAs substrates through the use of InGaSb defect filter layers has been investigated. More specifically, we study the effects of ...

    A. Mansoori, S. J. Addamane, E. J. Renteria, D. M. Shima… in Journal of Electronic Materials (2020)

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    Article

    Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a gre...

    E. J. Renteria, A. J. Muniz, S. J. Addamane, D. M. Shima… in Journal of Electronic Materials (2015)