Skip to main content

5 Result(s)

within S. A. Stockman Remove this filter Electronics and Microelectronics, Instrumentation Remove this filter

and

  1. No Access

    Article

    Donor-acceptor interactions in Al0.5In0.5P

    Dopant interactions are considered between Mg-acceptor atoms and various donor species, including the deep donor; oxygen; and the shallow donors, Te, S, and Si, in Al0.5In0.5P. While each of these donor species i...

    P. N. Grillot, S. A. Stockman, J. -W. Huang, S. S. Yi in Journal of Electronic Materials (2002)

  2. No Access

    Article

    Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE

    Oxygen related defects in Al-containing materials have been determined to degrade luminescence efficiency and reduce carrier lifetime and affect the performance of light emitting diodes and laser diodes utiliz...

    J. G. Cederberg, B. Bieg, J. -W. Huang, S. A. Stockman… in Journal of Electronic Materials (2000)

  3. No Access

    Article

    Oxygen incorporation in AllnP, and its effect on P-type do** with magnesium

    Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylalumin...

    S. A. Stockman, J. -W. Huang, T. D. Osentowski… in Journal of Electronic Materials (1999)

  4. No Access

    Article

    A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs

    Factors which influence the alloy composition and do** level of CCl4-doped In0.53Ga04.7As grown at low temperatures (450°C < Tg < 560°C) by low-pressure metalorganic chemical vapor deposition (MOCVD) have been ...

    S. A. Stockman, A. W. Hanson, C. M. Colomb… in Journal of Electronic Materials (1994)

  5. No Access

    Article

    Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD

    Carbon dopedp-type GaAs and In0.53Ga0.47As epitaxial layers have been grown by low-pressure metalorganic chemical vapor deposition using CC14 as the carbon source. Low-temperature post-growth annealing resulted i...

    S. A. Stockman, A. W. Hanson, S. M. Lichtenthal… in Journal of Electronic Materials (1992)