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Oxygen incorporation in AllnP, and its effect on P-type do** with magnesium

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Abstract

Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

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Author notes

  1. A. J. Moll

    Present address: Hewlett-Packard Company, Colorado Springs Technology Center, 1900 Garden of the Gods Road, 80907, Colorado Springs, CO

  2. B. W. Liang

    Present address: Hewlett-Packard Company, Fiber Optics Components Division, 370 W. Trimble Road, 95131, San Jose, CA

Authors and Affiliations

  1. Hewlett-Packard Company, Optoelectronics Division, 370 W. Trimble Road, 95131, San Jose, CA

    S. A. Stockman, J. -W. Huang, T. D. Osentowski, H. C. Chui, M. J. Peanasky, S. A. Maranowski, P. N. Grillot, A. J. Moll, C. H. Chen, C. P. Kuo & B. W. Liang

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Stockman, S.A., Huang, J.W., Osentowski, T.D. et al. Oxygen incorporation in AllnP, and its effect on P-type do** with magnesium. J. Electron. Mater. 28, 916–925 (1999). https://doi.org/10.1007/s11664-999-0220-x

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  • DOI: https://doi.org/10.1007/s11664-999-0220-x

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