12 Result(s)
within
S. A. Goodman
Materials Science
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Article
Electrical Characterization of Sputter Deposition Induced Defects in n-GaN
We have used current-voltage (I-V) measurements to assess and compare the electrical characteristics of resistively evaporated and sputter deposited Au Schottky contacts on epitaxially grown GaN. These I-V measur...
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Article
Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
We report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardmen...
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Article
Defects Created by 25 keV Hydrogen Implantation in n-type GaN
We have studied defects introduced in n-GaN during 25 keV hydrogen and 40 keV He implantation using deep level transient spectroscopy (DLTS). These measurements revealed that 25 keV hydrogen implantation introduc...
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Article
Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation
We report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardmen...
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Article
Electrical Characterization of Sputter Deposition Induced Defects in n-GaN
We have used current-voltage (I-V) measurements to assess and compare the electrical characteristics of resistively evaporated and sputter deposited Au Schottky contacts on epitaxially grown GaN. These I-V measur...
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Article
Schottky Barrier Modification Of Low Energy Ar-Ion Bombarded GaAs And Si
Epitaxially grown GaAs (p- and n-type) and n-Si were bombarded with low energy Ar-ions. Current voltage measurements on Schottky barrier diodes fabricated on the sputtered p-GaAs (Sc) and n-Si (Pd) showed that...
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Article
Characterization of a Metastable Defect Introduced In Epitaxially Grown Boron Doped Si by 5.4 Mev α-Particles
Deep level transient spectroscopy (DLTS) was used to examine the metastability of a defect configuration in epitaxially grown boron-doped p-type Si. We report the detection of a new metastable defect Hα2 in p-...
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Article
Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy
We report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstr...
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Article
Defect characterization of n-type Si1−xGex after 1.0 kev helium-ion etching
SiGe heterostructures with their associated geometries and properties promise a novel generation of Si-based devices. Surface processing and, in particular, dry or plasma etching of semiconductors is a key tec...
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Article
Optical and Electrical Characterisation Study of SiCl4 Reactive Ion Etched Gaas
In this study 1016cm-3 n-type epitaxial GaAs was reactive-ion-etched (RIE) in a parallel plate type reactor as a function of rf power and gas pressure using a SiCl4 plasma. The sample matrix followed a 3 level 3 ...
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Article
Metal contacts to gallium arsenide
In this paper, some aspects that determine the properties of Schottky and ohmic contacts to GaAs are discussed. For Schottky barrier diodes (SBD), we present results of a comprehensive study involving 41 diffe...
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Article
DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes
The presence of hole traps has been studied by deep level transient spectroscopy (DLTS) characterization of low carrier densityp-type GaAs grown by MBE on p+-GaAs substrates using Al and Co Schottky contacts. The...
