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  1. No Access

    Article

    Electrical Characterization of Sputter Deposition Induced Defects in n-GaN

    We have used current-voltage (I-V) measurements to assess and compare the electrical characteristics of resistively evaporated and sputter deposited Au Schottky contacts on epitaxially grown GaN. These I-V measur...

    F. D. Auret, S. A. Goodman, F. K. Koschnick, J. M. Spaeth… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation

    We report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardmen...

    S. A. Goodman, F. D. Auret, F. K. Koschnick, J. M. Spaeth… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Defects Created by 25 keV Hydrogen Implantation in n-type GaN

    We have studied defects introduced in n-GaN during 25 keV hydrogen and 40 keV He implantation using deep level transient spectroscopy (DLTS). These measurements revealed that 25 keV hydrogen implantation introduc...

    F. D. Auret, W. E. Meyer, H. A. van Laarhoven… in MRS Online Proceedings Library (2001)

  4. Article

    Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation

    We report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardmen...

    S. A. Goodman, F. D. Auret, F. K. Koschnick… in MRS Internet Journal of Nitride Semiconduc… (1999)

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  5. Article

    Electrical Characterization of Sputter Deposition Induced Defects in n-GaN

    We have used current-voltage (I-V) measurements to assess and compare the electrical characteristics of resistively evaporated and sputter deposited Au Schottky contacts on epitaxially grown GaN. These I-V measur...

    F. D. Auret, S. A. Goodman, F. K. Koschnick… in MRS Internet Journal of Nitride Semiconduc… (1999)

    Download PDF (200 KB) View Article

  6. No Access

    Article

    Schottky Barrier Modification Of Low Energy Ar-Ion Bombarded GaAs And Si

    Epitaxially grown GaAs (p- and n-type) and n-Si were bombarded with low energy Ar-ions. Current voltage measurements on Schottky barrier diodes fabricated on the sputtered p-GaAs (Sc) and n-Si (Pd) showed that...

    P. N. K. Deenapanray, F. D. Auret, S. A. Goodman in MRS Online Proceedings Library (1998)

  7. No Access

    Article

    Characterization of a Metastable Defect Introduced In Epitaxially Grown Boron Doped Si by 5.4 Mev α-Particles

    Deep level transient spectroscopy (DLTS) was used to examine the metastability of a defect configuration in epitaxially grown boron-doped p-type Si. We report the detection of a new metastable defect Hα2 in p-...

    M. Mamor, F. D. Auret, S. A. Goodman, W. E. Meyer in MRS Online Proceedings Library (1998)

  8. No Access

    Article

    Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

    We report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstr...

    P. N. K. Deenapanray, F. D. Auret, M. C. Ridgway… in MRS Online Proceedings Library (1998)

  9. No Access

    Article

    Defect characterization of n-type Si1−xGex after 1.0 kev helium-ion etching

    SiGe heterostructures with their associated geometries and properties promise a novel generation of Si-based devices. Surface processing and, in particular, dry or plasma etching of semiconductors is a key tec...

    S. A. Goodman, F. D. Auret, K. Nauka, J. B. Malherbe in Journal of Electronic Materials (1997)

  10. No Access

    Article

    Optical and Electrical Characterisation Study of SiCl4 Reactive Ion Etched Gaas

    In this study 1016cm-3 n-type epitaxial GaAs was reactive-ion-etched (RIE) in a parallel plate type reactor as a function of rf power and gas pressure using a SiCl4 plasma. The sample matrix followed a 3 level 3 ...

    M. Murtagh, Shu-Ren Ye, H. J. Masterson, J. T. Beechinor… in MRS Online Proceedings Library (1996)

  11. No Access

    Article

    Metal contacts to gallium arsenide

    In this paper, some aspects that determine the properties of Schottky and ohmic contacts to GaAs are discussed. For Schottky barrier diodes (SBD), we present results of a comprehensive study involving 41 diffe...

    W. O. Baenard, G. Myburg, F. D. Auret, S. A. Goodman… in Journal of Electronic Materials (1996)

  12. No Access

    Article

    Defect annealing of alpha-particle irradiated n-GaAs

    The annealing behaviour of irradiation induced defects in n-type GaAs irradiated at 300 K with 5.4 MeV alpha-particles from an americium-241 (Am-241) radio nuclide have been investigated. The annealing kinetic...

    S. A. Goodman, F. D. Auret, G. Myburg in Applied Physics A (1994)

  13. No Access

    Article

    Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides

    We investigated defect production in n-type GaAs with two different free-carrier densities (4×1014 and 1×1016/cm3) by using particles liberated from radionuclides. 90Sr and 241Am were employed as beta and alpha s...

    F. D. Auret, S. A. Goodman, G. Myburg, W. E. Meyer in Applied Physics A (1993)

  14. No Access

    Article

    DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes

    The presence of hole traps has been studied by deep level transient spectroscopy (DLTS) characterization of low carrier densityp-type GaAs grown by MBE on p+-GaAs substrates using Al and Co Schottky contacts. The...

    F. Danie Auret, S. A. Goodman, G. Myburg in Journal of Electronic Materials (1992)

  15. No Access

    Chapter and Conference Paper

    Development of Yeast Inhibitory Compounds for Incorporation into Silage Inoculants

    Microorganisms cause considerable losses of ensiled animal fodder. Anaerobic deterioration is mediated principally by bacteria but this can be minimised by careful practice during silage making. Aerobic deteri...

    S. A. Goodman, C. Orr, P. J. Warner in Bacteriocins, Microcins and Lantibiotics (1992)

  16. No Access

    Chapter

    Biochemical, Immunological and Functional Analysis of Lymphocytes from the LPS-Non-Responder C3H/HeJ Mouse

    Since its discovery in 1968 by Sultzer (1) as a mutant mouse strain which displayed aberrant peritoneal inflammatory cell responses to endotoxin, the C3H/HeJ mouse has served as one of the dominant experimenta...

    D. C. Morrison, H-W. Wollenweber… in Immunobiology and Immunopharmacology of Ba… (1986)

  17. No Access

    Chapter and Conference Paper

    Regulation of Lipopolysaccharide Biologic Activity by Polysaccharide

    Bacterial lipopolysaccharides (LPS) have been implicated as a major contributing factor in the pathogenesis of gram-negative bacterial infections. Biochemical investigations have defined in detail the chemical...

    D. C. Morrison, S. W. Vukajlovich… in The Pathogenesis of Bacterial Infections (1985)