Skip to main content

4 Result(s)

within J. B. Malherbe Remove this filter

and

  1. No Access

    Article

    Defect characterization of n-type Si1−xGex after 1.0 kev helium-ion etching

    SiGe heterostructures with their associated geometries and properties promise a novel generation of Si-based devices. Surface processing and, in particular, dry or plasma etching of semiconductors is a key tec...

    S. A. Goodman, F. D. Auret, K. Nauka, J. B. Malherbe in Journal of Electronic Materials (1997)

  2. No Access

    Article

    Electronic Properties of Defects Formed in n-Si During Sputter-Etching in an Ar Plasma

    We have employed current-voltage (IV), capacitance-voltage (CV) and deep level transient spectroscopy (DLTS) techniques to characterise the defects induced in n-Si during RF sputter-etching in an Ar plasma. Th...

    P. N. K. Deenapanray, F. D. Auret, C. Schutte, G. Myburg… in MRS Online Proceedings Library (1996)

  3. No Access

    Article

    AES and SIMS investigations of the oxide films on Fe-40Cr-Ru alloys

    Auger and SIMS depth profiling have been used to investigate the effect of ruthenium addition on the oxidation behaviour of the Fe-40Cr-Ru alloys oxidized in air at 500 °C. Auger results revealed that the oxid...

    S. C. Tjong, W. O. Barnard, J. B. Malherbe in Journal of Materials Science (1992)

  4. No Access

    Article

    Ion Beam Mixing of Sb Schottky Contacts on n-Si

    TheI—V characteristics of as—deposited antimony Schottky contacts on silicon were extremely sensitive to interface conditions. This led to unpredictable results for the unimplanted contacts. After Si* implantatio...

    J. B. Malherbe, K. P. Weimer, L. J. Bredell, E. Friedland… in MRS Online Proceedings Library (1989)