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  1. Article

    Implantation Studies on Silicon-Doped GaN

    Silicon-doped GaN layers grown by low-pressure metalorganic vapor-phase epitaxy with Si concentrations ranging from 2 × 1017 Si/cm3 to 9.2 × 1018 Si/cm3 were investigated by means of the perturbed angular correla...

    Ronnie Simon, Reiner Vianden, Klaus Köhler in Journal of Electronic Materials (2013)

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