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Open AccessFirst operation of the KATRIN experiment with tritium
The determination of the neutrino mass is one of the major challenges in astroparticle physics today. Direct neutrino mass experiments, based solely on the kinematics of \(\upbeta \)β-decay, provide a largely mod...
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Growth of Ga2O3 by furnace oxidation of GaN studied by perturbed angular correlations
Ga2O3 is a promising material for use in “solar-blind” UV-detectors which can be produced efficiently by oxidation of GaN. In this study we focus on the evolution of the oxide layer when GaN is heated in air. The...
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Search for magnetic interaction in In doped AlN using perturbed angular correlation spectroscopy
The possible presence of a large magnetic field due to spin polarization of a Cd nucleus (decay product of 111In) at an Al substitutional site in AlN is investigated with perturbed angular correlation (PAC) spect...
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Electric field gradient in nanostructured SnO2 studied by means of PAC spectroscopy using 111Cd or 181Ta as probe nuclei
Electric quadrupole interactions were studied in pure and Mn-doped powder samples and thin films of SnO2 using perturbed γγ angular correlation spectroscopy (PAC). The powder samples were prepared by Sol gel meth...
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Implantation Studies on Silicon-Doped GaN
Silicon-doped GaN layers grown by low-pressure metalorganic vapor-phase epitaxy with Si concentrations ranging from 2 × 1017 Si/cm3 to 9.2 × 1018 Si/cm3 were investigated by means of the perturbed angular correla...
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Growth of germanium–carbide thin film on crystal substrate
The formation of germanium-carbide in crystalline germanium substrate is studied using the perturbed γ–γ angular correlation (PAC) method. The growth of Ge–C micro-crystalline system in the host matrix was obs...
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Article
Temperature dependence of the hyperfine fields of 111In in sapphire (Al2O3) single crystals
The decay of 111In to 111Cd via electron capture, accompanied by Auger electrons, leaves the outermost atomic shells of the cadmium in a highly ionized state. The recovery of the electron shells depends strongly ...
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Article
Angular correlation studies on 172Lu(172Yb) in GaN and measurements at low temperatures
For optoelectronic devices semiconductors with large band gap doped with rare earth are used. Do** is generally performed during growth but for more structured do** the ion implantation technique is prefer...
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Doped silicon under uniaxial tensile strain investigated by PAC
The recent application of strained silicon into transistor design has led to significant progress in increasing the performance of devices. However, up to now little is known about the mechanical behaviour of ...
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Chapter and Conference Paper
Temperature Dependence of the Quadrupole Interaction for 111In in Sapphire
Perturbed angular correlation measurements of the hyperfine interaction of 111In in sapphire show, that after implantation and annealing at 1000°C, the fraction of undisturbed probe atoms exhibiting a unique quad...
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Article
Preface
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Article
Temperature Dependence of the Quadrupole Interaction for 111In in Sapphire
Perturbed angular correlation measurements of the hyperfine interaction of 111In in sapphire show, that after implantation and annealing at 1000°C, the fraction of undisturbed probe atoms exhibiting a unique quad...