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Article
Temperature Dependent Characteristics of Hydrogenated Amorphous Silicon thin film Transistors
The characteristics of inverted staggered hydrogenated amorphous silicon/silicon nitride (a-Si:H/a-SiNx:H) thin film transistors (TFTs) are reported between 80 K and 420 K. The TFTs are found to have three distin...
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Article
High-Dielectric Constant Insulators and the AMLCD Process: Is Amorphous BST a Candidate?
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Article
High Conductivity Gate Metallurgy for Tft/Lcd's
Amorphous silicon based thin film transistor liquid crystal displays (TFT/LCD) have become the dominant technology used for flat panel displays for notebook computers. The need for higher resolution, larger di...
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Article
High Conductivity Gate Metallurgy for TFT/LCD’s
Amorphous silicon based thin film transistor liquid crystal displays (TFT/LCD) have become the dominant technology used for flat panel displays for notebook computers. The need for higher resolution, larger di...