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  1. No Access

    Article

    Temperature Dependent Characteristics of Hydrogenated Amorphous Silicon thin film Transistors

    The characteristics of inverted staggered hydrogenated amorphous silicon/silicon nitride (a-Si:H/a-SiNx:H) thin film transistors (TFTs) are reported between 80 K and 420 K. The TFTs are found to have three distin...

    N. Lustig, J. Kanicki, R. Wisnieff, J. Griffith in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    High-Dielectric Constant Insulators and the AMLCD Process: Is Amorphous BST a Candidate?

    P. Andy, D. Neumayer, P. Duncombe, C. Dimitrakopoulos… in MRS Online Proceedings Library (1999)

  3. No Access

    Article

    High Conductivity Gate Metallurgy for Tft/Lcd's

    Amorphous silicon based thin film transistor liquid crystal displays (TFT/LCD) have become the dominant technology used for flat panel displays for notebook computers. The need for higher resolution, larger di...

    Peter M. Fryer, E. Colgan, E. Galligan, W. Graham… in MRS Online Proceedings Library (1998)

  4. No Access

    Article

    High Conductivity Gate Metallurgy for TFT/LCD’s

    Amorphous silicon based thin film transistor liquid crystal displays (TFT/LCD) have become the dominant technology used for flat panel displays for notebook computers. The need for higher resolution, larger di...

    Peter M. Fryer, E. Colgan, E. Galligan, W. Graham… in MRS Online Proceedings Library (1998)