38 Result(s)
within
R. P. Seisyan
English
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Article
Temperature-Dependent Total Absorption of Exciton Polaritons in Bulk Semiconductors
This paper highlights the temperature factor in the experimental study of total absorption as a method for experimental validation and the study of the exciton–polariton light transfer mechanism near the funda...
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Article
Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition
The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number ...
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Article
Effect of a Coulomb well in (In, Ga)As/GaAs quantum wells
Magnetooptical investigation of exciton transitions in high-quality quantum wells of an (In, Ga)As/GaAs heterosystem has been carried out. Investigation of transmission of free-hanging samples detached from th...
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Article
Scattering of an exciton polariton by impurity centers in GaAs
Scattering of an exciton polariton by impurity centers at low temperatures has not been investigated comprehensively in spite of its significant role in processes accompanying Bose–Einstein condensation of an ...
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Article
Absorption of the laser radiation by the laser plasma with gas microjet targets
An upper limit of absorption of the laser radiation in the plasma produced in a gas jet Xe target with the average density of (3–6) × 1018 cm–3 and the effective diameter of 0.7 mm is found. It is equal to ≈50% a...
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Article
Diamagnetic excitons in semiconductors (Review)
Optical properties of semiconductor crystals in the presence of a high magnetic field have been considered. The field turn-on gives rise to oscillations of the optical-absorption edge or, more specifically, th...
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Article
Open AccessDiffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs
If light beam propagates through matter containing point impurity centers, the amount of energy absorbed by the media is expected to be either independent of the impurity concentration N or proportional to N, cor...
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Article
Elastic scattering of exciton polaritons
The probability of elastic scattering by impurities of exciton polaritons in thin GaAs samples has been calculated theoretically. It has been shown that thin samples of commercially pure GaAs satisfy the condi...
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Article
“Exciton” photoconductivity in GaAs crystals
The spectral dependence of the photoconductivity in epitaxial GaAs of high purity and crystalline perfection grown on a semiinsulating GaAs substrate are measured at 1.7 and 77 K and analyzed theoretically. Th...
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Article
The effect of a UV preionization pulse on short-wave radiation output from a laser-produced-plasma source with a Xe gas-jet target
Experiments aimed to raise the emissivity of a laser-produced plasma source with a Xe gas target in the far-UV spectral range are described. In these experiments, the main pulse of the IR Nd:YAG laser was prec...
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Article
Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra
Exciton optical spectra are sensitive to even slight changes in the properties of a solid. The spectra of exciton polaritons can be especially informative, although the spectroscopy of these quasiparticles imp...
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Article
Optical transmittance of thin GaAs wafers upon laser pum** in the region of exciton resonances and the continuum of states: Exciton-exciton interaction
The transmittance spectra of thin “pure” GaAs bulk wafers upon optical pum** corresponding to the band of the ground state of the exciton series are recorded at a temperature of T = 1.7 K. The wafers were grown...
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Article
Exciton absorption of the GaAs semiconductor crystals under optical pum** to the conduction band
Modifications of the exciton structure of the fundamental absorption edge in the GaAs crystals is experimentally studied at T = 1.7 K using the optical pum** at a photon energy that is significantly greater tha...
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Article
Temperature-dependent integral exciton absorption in semiconducting GaAs crystals
This Letter is devoted to an experimental investigation of the temperature dependence of the fundamental absorption edge of thin GaAs layers grown by molecular beam epitaxy. Critical temperature T ...
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Article
Diamagnetic exciton polariton in the interband magnetooptics of semiconductors
The experimentally observed magnetic-field dependence of the integrated absorption coefficient in Al0.15Ga0.85As samples at 1.7 K is interpreted. It is established that the dependence results from the competition...
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Article
A study of direct optical transitions in silicon single crystals based on transmission spectra
The transmission spectrum of single-crystal silicon in the range of 2.75–3.25 eV has been obtained experimentally. An empirical formula is proposed to describe the spectral dependence of the optical density. T...
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Article
Temperature-dependent integral exciton absorption in semiconducting InP crystals
The temperature dependence of the fundamental absorption edge in free-standing “epitaxial” InP layers has been experimentally studied. The integral exciton absorption coefficient K(T) exhibits an increase at low ...
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Article
Interaction of polarized light with comb-shaped metal-coated nanostructures
We have studied metal-coated (20-nm-thick gold) periodic grating structures (period T = 350 nm) with a rectangular profile formed on the surface of a GaAs substrate. The spectra of reflection of a linearly polari...
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Article
Nanolithography in microelectronics: A review
The current status of basic photolithographic techniques allowing researchers to achieve results that seemed to be unrealistic even a short time ago is reviewed. For example, advanced DUV photolithography make...
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Article
Temperature-dependent excitonic absorption in long-period multiple In x Ga1 − x As/GaAs quantum well structures
Temperature variations in the fundamental absorption edge of long-period In x Ga1 − x As/GaAs structures are studied for samples with different numbers of...
