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A study of direct optical transitions in silicon single crystals based on transmission spectra

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Abstract

The transmission spectrum of single-crystal silicon in the range of 2.75–3.25 eV has been obtained experimentally. An empirical formula is proposed to describe the spectral dependence of the optical density. The energy of the direct transition at the saddle point is found to be E(Γ15) − E(Γ25’) = 3.43 eV. Analysis of the spectral dependence showed that the observed absorption corresponds to direct transitions to the van Hove singularity M 1 of the conduction band.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. S. Pankratov, R. P. Seisyan & A. A. Shorokhov

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  1. I. S. Pankratov
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  2. R. P. Seisyan
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  3. A. A. Shorokhov
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Correspondence to I. S. Pankratov.

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Original Russian Text © I.S. Pankratov, R.P. Seisyan, A.A. Shorokhov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 13, pp. 1–7.

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Pankratov, I.S., Seisyan, R.P. & Shorokhov, A.A. A study of direct optical transitions in silicon single crystals based on transmission spectra. Tech. Phys. Lett. 38, 597–599 (2012). https://doi.org/10.1134/S1063785012070097

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  • DOI: https://doi.org/10.1134/S1063785012070097

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