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Temperature-dependent integral exciton absorption in semiconducting GaAs crystals

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Abstract

This Letter is devoted to an experimental investigation of the temperature dependence of the fundamental absorption edge of thin GaAs layers grown by molecular beam epitaxy. Critical temperature T cr = 135 K, above which the integral absorption becomes constant, corresponding values of critical dam** parameter Γ c = 0.248 meV, and longitudinal-transverse splitting khωLT = 0.082 meV are determined experimentally. The temperature dependence of the true dissipative dam** is separated.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. A. Vaganov & R. P. Seisyan

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  1. S. A. Vaganov
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  2. R. P. Seisyan
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Correspondence to S. A. Vaganov.

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Original Russian Text © S.A. Vaganov, R.P. Seisyan, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 19, pp. 9–13.

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Vaganov, S.A., Seisyan, R.P. Temperature-dependent integral exciton absorption in semiconducting GaAs crystals. Tech. Phys. Lett. 38, 873–875 (2012). https://doi.org/10.1134/S1063785012100136

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