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Chapter and Conference Paper
Behavior of Hydrogen Introduced Under Plasma Discharge or Cathodic Polarization into Silicon
This paper concerns recent results on hydrogen introduction, diffusion and behavior in mono and bicrystalline silicon. Plasma annealing, cathodic charging, SIMS profiling, capacity-voltage measurement and LBIC...
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Article
Modeling of the Diffusion of Hydrogen in Silicon
A model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperat...
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Article
Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon
Deuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm-3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model...
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Article
Light-induced defects in plasma-hydrogenated InP: Zn
PhotoLuminescence (PL) measurements are used to investigate the effects of a H2 plasma treatment in heavily doped p-type InP: Zn. Beside the large decrease in free hole concentration in the hydrogenated samples, ...
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Chapter and Conference Paper
Strain relaxation in (Al,Ga)N/GaN heterostructures
Strain relaxation mechanisms in metal-organic vapour phase epitaxy grown (Al,Ga)N/GaN heterostructures are presented. Relaxation first occurs through a 2D–3D transition. For pure AlN, misfit a-type dislocations a...
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Chapter and Conference Paper
STEM investigations of (In,Ga)N/GaN quantum wells
Nanostructures of III-N semiconductors have a great commercial potential due to their optoelectronic properties. The structural and chemical characteristics of such structures determine the performance of the ...
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Article
Open AccessFiltering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescenc...
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Article
Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
Incorporation of Mg in metalorganic vapour phase epitaxy (MOVPE) GaN has been investigated, using two different Mg precursors: bis-methylcyclopentadienyl magnesium [(MeCp)2Mg] and Solution bis-cyclopentadienyl ma...