Skip to main content

8 Result(s)

within P. de Mierry Remove this filter English Remove this filter

and

  1. Article

    Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

    Incorporation of Mg in metalorganic vapour phase epitaxy (MOVPE) GaN has been investigated, using two different Mg precursors: bis-methylcyclopentadienyl magnesium [(MeCp)2Mg] and Solution bis-cyclopentadienyl ma...

    P. de Mierry, B. Beaumont, E. Feltin… in MRS Internet Journal of Nitride Semiconduc… (2020)

    Download PDF (95 KB) View Article

  2. Article

    Open Access

    Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

    Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescenc...

    N Kriouche, M Leroux, P Vennéguès, M Nemoz, G Nataf… in Nanoscale Research Letters (2010)

    Download PDF (624 KB) View Article

  3. No Access

    Chapter and Conference Paper

    STEM investigations of (In,Ga)N/GaN quantum wells

    Nanostructures of III-N semiconductors have a great commercial potential due to their optoelectronic properties. The structural and chemical characteristics of such structures determine the performance of the ...

    P. Manolaki, I. Häusler, H. Kirmse… in EMC 2008 14th European Microscopy Congress… (2008)

  4. No Access

    Chapter and Conference Paper

    Strain relaxation in (Al,Ga)N/GaN heterostructures

    Strain relaxation mechanisms in metal-organic vapour phase epitaxy grown (Al,Ga)N/GaN heterostructures are presented. Relaxation first occurs through a 2D–3D transition. For pure AlN, misfit a-type dislocations a...

    P Vennéguès, J M Bethoux, Z Bougrioua, M Azize… in Microscopy of Semiconducting Materials (2005)

  5. No Access

    Article

    Light-induced defects in plasma-hydrogenated InP: Zn

    PhotoLuminescence (PL) measurements are used to investigate the effects of a H2 plasma treatment in heavily doped p-type InP: Zn. Beside the large decrease in free hole concentration in the hydrogenated samples, ...

    P. de Mierry, R. Madelon, F. Cruège, R. Rizk in Applied Physics A (1995)

  6. No Access

    Article

    Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

    Deuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm-3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model...

    R. Rizk, P. De Mierry, D. Ballutaud, M. Aucouturier… in MRS Online Proceedings Library (1990)

  7. No Access

    Article

    Modeling of the Diffusion of Hydrogen in Silicon

    A model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperat...

    D. Mathiot, D. Ballutaud, P. De Mierry, M. Aucouturier in MRS Online Proceedings Library (1989)

  8. No Access

    Chapter and Conference Paper

    Behavior of Hydrogen Introduced Under Plasma Discharge or Cathodic Polarization into Silicon

    This paper concerns recent results on hydrogen introduction, diffusion and behavior in mono and bicrystalline silicon. Plasma annealing, cathodic charging, SIMS profiling, capacity-voltage measurement and LBIC...

    A. Chari, P. de Mierry, M. Aucouturier in Seventh E.C. Photovoltaic Solar Energy Conference (1987)