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    Article

    Modeling of the Diffusion of Hydrogen in Silicon

    A model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperat...

    D. Mathiot, D. Ballutaud, P. De Mierry, M. Aucouturier in MRS Online Proceedings Library (1989)

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    Article

    Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon

    Deuterium diffusion profiles in medium phosphorus doped silicon (1016 and 1017 cm-3) at two different deuteration temperatures (120 and 150°C) are simulated with an improved version of a previously reported model...

    R. Rizk, P. De Mierry, D. Ballutaud, M. Aucouturier in MRS Online Proceedings Library (1990)

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    Chapter and Conference Paper

    Strain relaxation in (Al,Ga)N/GaN heterostructures

    Strain relaxation mechanisms in metal-organic vapour phase epitaxy grown (Al,Ga)N/GaN heterostructures are presented. Relaxation first occurs through a 2D–3D transition. For pure AlN, misfit a-type dislocations a...

    P Vennéguès, J M Bethoux, Z Bougrioua, M Azize in Microscopy of Semiconducting Materials (2005)

  4. Article

    Open Access

    Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

    Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescenc...

    N Kriouche, M Leroux, P Vennéguès, M Nemoz, G Nataf in Nanoscale Research Letters (2010)

  5. Article

    Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

    Incorporation of Mg in metalorganic vapour phase epitaxy (MOVPE) GaN has been investigated, using two different Mg precursors: bis-methylcyclopentadienyl magnesium [(MeCp)2Mg] and Solution bis-cyclopentadienyl ma...

    P. de Mierry, B. Beaumont, E. Feltin in MRS Internet Journal of Nitride Semiconduc… (2020)