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  1. No Access

    Article

    Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3

    Characteristics of metal–oxide–high-k–oxide–silicon (MOHOS) memories with oxygen-rich or oxygen-deficient GdO as charge storage layer annealed by NH3 or N2 are investigated. Transmission electron microscopy, X-ra...

    Lu Liu, J. P. Xu, J. X. Chen, P. T. Lai in Applied Physics A (2014)

  2. Article

    Open Access

    LaTiON/LaON as band-engineered charge-trap** layer for nonvolatile memory applications

    Charge-trap** characteristics of stacked LaTiON/LaON film were investigated based on Al/Al2O3/LaTiON-LaON/SiO2/Si (band-engineered MONOS) capacitors. The physical properties of the high-k films were analyzed by...

    X. D. Huang, P. T. Lai, Johnny K. O. Sin in Applied Physics A (2012)

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  3. Article

    Open Access

    Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

    Ge Metal–Oxide–Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorpo...

    H. X. Xu, J. P. Xu, C. X. Li, C. L. Chan, P. T. Lai in Applied Physics A (2010)

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  4. Article

    Open Access

    Comparative Study of HfTa-based gate-dielectric Ge metal–oxide–semiconductor capacitors with and without AlON interlayer

    The electrical properties and high-field reliability of HfTa-based gate-dielectric metal–oxide–semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental result...

    J. P. Xu, X. F. Zhang, C. X. Li, C. L. Chan, P. T. Lai in Applied Physics A (2010)

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  5. No Access

    Article

    Laser Micro-machining of Three-Dimensional Microstructures in Optical Materials

    We demostrate an advanced precision cutting tool using a 349 nm nanosecond-pulsed UV laser micromachining setup. After expansion and collimation, the laser beam is directed vertically and focused with a high p...

    X. H. Wang, P. T. Lai, H. W. Choi in MRS Online Proceedings Library (2009)

  6. No Access

    Article

    A simplified post-soft-breakdown current model for MOS devices

    Based on the tunneling current model, a simplified current model is developed for MOS devices after soft breakdown (SBD). The post-soft-breakdown current consists of modified direct tunneling current and Fowle...

    Z. L. Li, J. P. Xu, P. T. Lai in Applied Physics A (2009)

  7. No Access

    Article

    Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

    Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are inv...

    J. P. Xu, X. Zou, C. X. Li, P. T. Lai, C. L. Chan in Applied Physics A (2009)

  8. No Access

    Article

    High-k gate stack Hf x Ti1−x ON/SiO2 for SiC MOS devices

    In order to reduce the electric field in the gate dielectric and thus solve the reliability problem, high dielectric-constant (k) gate dielectrics Hf x Ti1−x ...

    L. M. Lin, P. T. Lai in Journal of Materials Science: Materials in Electronics (2008)

  9. No Access

    Chapter and Conference Paper

    Nanostructures on GaN by Microsphere Lithography

    The fabrication of nanopores on GaN substrates using the simple and economical technique of microsphere lithography is demonstrated. A self-assembled hexagonal microsphere array formed on GaN substrate acts as...

    W N Ng, K N Hui, X H Wang, C H Leung… in Microscopy of Semiconducting Materials 2007 (2008)

  10. No Access

    Article

    Effects of chlorine on interfacial properties and reliability of SiO2 grown on 6H-SiC

    A new process of oxidizing 6H-SiC in dry O2+trichloroethylene (TCE) is used to incorporate chlorine in SiO2. The interface quality and the reliability of 6H-SiC MOS capacitors with gate dielectrics prepared by th...

    J.P. Xu, P.T. Lai, H.P. Wu, C.L. Chan in Applied Physics A (2005)

  11. No Access

    Article

    Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO

    The interface quality and reliability of gate oxides grown on n-/p-type 6H-SiC in diluted NO gas at 1150 °C are investigated. As compared to conventional 100%-NO oxidation, the diluted-NO (50% and 23%) oxidati...

    P.T. Lai, J.P. Xu, C.X. Li, C.L. Chan in Applied Physics A (2005)

  12. No Access

    Article

    Indium tin oxide surface treatments for improvement of organic light-emitting diode performance

    We have systematically investigated the influence of UV ozone and acid (HCl) treatments (separate and combined) of the surface of indium tin oxide (ITO) on the ITO parameters and the performance of organic lig...

    C.N. Li, A.B. Djurišić, C.Y. Kwong, P.T. Lai, W.K. Chan, S.Y. Liu in Applied Physics A (2005)

  13. No Access

    Article

    Sensing Properties of Ba1−xLaxNbyTi1−yO3 (x=0.25%, y=0.25%) Thin-Film on SiO2/Si Substrate

    Barium lanthanum titanate-niobate (Ba1−xLaxNbyTi1−yO3) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique has been used to fabricate a thin-film resistor and a metal-insulator-semico...

    B. Li, P. T. Lai, G. Q. Li, S. H. Zeng, M. Q. Huang in MRS Online Proceedings Library (2000)

  14. No Access

    Article

    Gate dielectrics prepared by double nitridation in NO and N2O

    Oxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N2O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less...

    J.P. Xu, P.T. Lai, Y.C. Cheng in Applied Physics A (2000)