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Article
Effect of Prestrain on Hydrogen-Induced Delayed Cracking for Medium Mn Steels
Medium Mn steels are a class of the new-generation ultra-high-strength materials used in automotives. However, despite excellent ductility, they may suffer from delayed cracking and thus cause serious concerns...
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Article
Impact of metabolic syndrome on myocardial injury and clinical outcome after percutaneous coronary intervention
This study tested the associations between metabolic syndrome, postprocedural myocardial injury, and clinical outcome after percutaneous coronary intervention.
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Article
Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3
Characteristics of metal–oxide–high-k–oxide–silicon (MOHOS) memories with oxygen-rich or oxygen-deficient GdO as charge storage layer annealed by NH3 or N2 are investigated. Transmission electron microscopy, X-ra...
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Article
A ‘FE-Meshfree’ TRIA3 element based on partition of unity for linear and geometry nonlinear analyses
A new 3-node triangular element is developed on the basis of partition of unity (PU) concept. The formulation employs the parametric shape functions of classical triangular element (TRIA3) to construct the PU ...
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Article
Open AccessImpacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric
Ge Metal–Oxide–Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorpo...
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Article
Open AccessComparative Study of HfTa-based gate-dielectric Ge metal–oxide–semiconductor capacitors with and without AlON interlayer
The electrical properties and high-field reliability of HfTa-based gate-dielectric metal–oxide–semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental result...
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Article
A simplified post-soft-breakdown current model for MOS devices
Based on the tunneling current model, a simplified current model is developed for MOS devices after soft breakdown (SBD). The post-soft-breakdown current consists of modified direct tunneling current and Fowle...
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Article
A phase I trial of intratumoral administration of recombinant oncolytic adenovirus overexpressing HSP70 in advanced solid tumor patients
Our pre-clinical studies demonstrated that intratumoral vaccination with a recombinant oncolytic type 2 adenovirus overexpressing the heat shock protein (HSP)70 protein, designated as H103, can inhibit primary...
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Article
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment
Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are inv...
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Article
Dynamics of atomic decay in a special one dimensional photonic crystal
Recently, Liu et al. [Phys. Rev. B 74, 075314 (2006)] pointed out that the atomic instant decay rate in one dimensional photonic crystal (1DPC) showed a series of pulse-like peaks with time. In this paper, we con...
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Article
Suppression of PPN/MG61 attenuates Wnt/β-catenin signaling pathway and induces apoptosis in human lung cancer
Wingless and int homologue (Wnt) family proteins have been shown to have important roles in the decision of cell fate and behavior at multiple stages during the development and tumorigenesis. One of the Drosophil...
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Article
The influence on atomic decay by inserting a LHM layer into an ordinary one dimensional multi-layer structure
Inserting left-handed material (LHM) layers into a one dimensional structure can influence the spontaneous emission (SpE) of a two-level atom. This has been investigated, starting from the simplest case of ...
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Article
Effects of chlorine on interfacial properties and reliability of SiO2 grown on 6H-SiC
A new process of oxidizing 6H-SiC in dry O2+trichloroethylene (TCE) is used to incorporate chlorine in SiO2. The interface quality and the reliability of 6H-SiC MOS capacitors with gate dielectrics prepared by th...
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Article
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
The interface quality and reliability of gate oxides grown on n-/p-type 6H-SiC in diluted NO gas at 1150 °C are investigated. As compared to conventional 100%-NO oxidation, the diluted-NO (50% and 23%) oxidati...
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Article
Effects of long-term enalapril and losartan therapy of heart failure on cardiovascular aldosterone
Plasma aldosterone escape is found during long-term ACE inhibitor therapy of chronic heart failure. Evidence for aldosterone production in cardiovascular tissues raised the question of whether aldosterone esca...
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Article
Gate dielectrics prepared by double nitridation in NO and N2O
Oxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N2O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less...
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Article
Converting near-bottom OBS measurements into suspended sediment concentrations
A method of estimating the mass proportion of nonhomogeneous sediment constituents in suspension is presented. This method provides a more accurate conversion of OBS measurements (volts) to suspended sediment...