-
Article
Thermal Stability of Strained Si on Relaxed Si1−xGex Buffer Layers
The thermal stability of strained Si on relaxed Si1−xGex structures annealed at 1000 °C was investigated using high-resolution x-ray diffraction, Raman spectroscopy and transmission electron microscopy. Interdiff...
-
Article
Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1−xGex Layers on Si(001) Substrates
Strain relaxation in He+-implanted and annealed Si(001)/Si1−xGex heterostructures was investigated using transmission electron microscopy techniques and x-ray diffraction. Depending on the implant conditions, bub...
-
Article
Laser Annealing of Defects in VPE and Cz Grown Gallium Arsenide with a Pulsed Nd:YAG Laser
Gallium arsenide crystals, both VPE and Cz grown, were annealed with a pulsed Nd:YAG laser. Gold Schottky diodes were fabricated and defects were studied using the DLTS technique. The native defect E(0.83eV) w...
-
Article
Characterization and Monitoring of Silicon-on-Insulator Fabrication Processes by High-Resolution X-ray Diffraction
High-resolution x-ray diffraction (HRXRD) was used to monitor silicon-on-insulator (SOI) processing steps. The use of HRXRD is attractive since it is non-destructive and can be applied directly to product wafe...
-
Chapter
Si/SiGe Quantum Devices, Quantum Wells, and Electron-Spin Coherence
Silicon quantum devices have progressed rapidly over the past decade, driven by recent interest in spintronics and quantum computing. Spin coherence has emerged as a leading indicator of suitable devices for q...
-
Chapter
Enhanced Carrier Mobility for Improved CMOS Performance
The amazing advancements achieved to data in complementary metal-oxide-silicon (CMOS) technology have come primarily from scaling, i.e., from reducing the critical dimensions of the transistors. Today’s microp...
-
Article
Controllable valley splitting in silicon quantum devices
Silicon has many attractive properties for quantum computing, and the quantum-dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conducti...
-
Chapter
Spin-based Quantum Dot Quantum Computing in Silicon
The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectron...
-
Article
Spin-Based Quantum Dot Quantum Computing in Silicon
The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectron...
-
Article
Influence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates
The strain relaxation and threading dislocation density of He-implanted and annealed SiGe/Si heterostructures have been studied. For He doses above a threshold of 8×1015 cm−2, the degree of strain relaxation depe...
-
Article
Strained Si-on-Insulator Fabricated from Elastically-Relaxed Si/SiGe Structures
Blanket pseudomorphic Si0.8Ge0.2/Si layer structures grown by Rapid thermal Chemical Vapor Deposition (RTCVD) on SOI substrates were etched to form 5µm × 5µm slabs, supported by a single pedestal at the center...
-
Article
Probing Strain Fields About Thin Film Structures Using X-Ray Microdiffraction
The transfer of strain between thin film features and the underlying substrate represents an important factor in the performance and reliability of semiconductor devices, particularly as the distances between ...
-
Article
High-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding
We demonstrate layer transfer of 150 nm of Si from a 200-mm, silicon-on-insulator (SOI) substrate onto a sapphire substrate using low-temperature wafer bonding (T=150°C). The crystalline quality and the therma...
-
Article
Free Standing Silicon as a Compliant Substrate for SiGe
We show that SiGe grown on free-standing silicon is elastically relaxed. The free-standing Si structure consists of a ∼30 nm-thick, 5 μm-square silicon slab supported by a SiO2 pedestal at a single contact point ...
-
Article
Free Standing Silicon as a Compliant Substrate for SiGe
We show that SiGe grown on free-standing silicon is elastically relaxed. The free-standing Si structure consists of a ∼30 nm-thick, 5 μm-square silicon slab supported by a SiO2 pedestal at a single contact point ...
-
Article
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
SiGe heterostructures on silicon-on-sapphire (SOS) substrates were investigated to determine the advantages of combining these two technologies. Devicequality epitaxial layer structures were grown by ultra-hig...
-
Article
Grazing incidence reciprocal space map** of partially relaxed SiGe films
Epitaxially grown lattice mismatched semiconductor structures are increasingly important for microelectronic and optoelectronic applications. Recently, a great deal of research has been carried out on strain r...
-
Article
Analysis of Sige Fet Device Structures on Silicon-on-sapphire Substrates by X-Ray Diffraction
Si/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolutio...
-
Article
Dislocation-Related Photoluminescence in Strain-Relaxed Si1-xGex. Buffer Layer Structures
Low-temperature photoluminescence (PL) spectroscopy was used to study electronic states associated with threading dislocations (D lines) in strain-relaxed Si1-xGex layers. The structures investigated were grown b...
-
Article
High-Resolution X-Ray Diffraction Measurements of SiGe/Si Structures
High-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables us to make extensive reciprocal space map measurem...
