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Article
Laser Annealing of Defects in VPE and Cz Grown Gallium Arsenide with a Pulsed Nd:YAG Laser
Gallium arsenide crystals, both VPE and Cz grown, were annealed with a pulsed Nd:YAG laser. Gold Schottky diodes were fabricated and defects were studied using the DLTS technique. The native defect E(0.83eV) w...
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Article
Brans (P. H.),Vade-mecum des lampes de T. S. F. 1950