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  1. No Access

    Article

    High Resolution Analysis of Embedded Quantum Dots

    A key piece of information in the understanding of quantum dot behaviour is the composition of the dot after any cap** and/or annealing processes. It is important to know the composition and uniformity of th...

    A. J. Harvey, H. J. Davock, P. J. Goodhew in MRS Online Proceedings Library (1999)

  2. No Access

    Article

    Photo Modified Growth of GaAs by Chemical Beam Epitaxy

    We report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) pro...

    R. Jothilingam, T. Farrell, T. B. Joyce, P. J. Goodhew in MRS Online Proceedings Library (1998)

  3. No Access

    Article

    S-Doped GaInAs Grown by Chemical Beam Epitaxy: Electrical and Structural Characterization

    We report on the electrical and structural characterization of sulfur (S) doped Ga0.73In0.27As layers, grown on SI (001) GaAs substrates by chemical beam epitaxy. The room temperature free electron concentration ...

    E. C. Paloura, G. Petkos, P. J. Goodhew, B. Theys… in MRS Online Proceedings Library (1996)

  4. No Access

    Article

    A Refined Model for Threading Dislocation Filtering in InxGa1-xAs/GaAs Epitaxial Layers

    A model is presented for the filtering of threading dislocations in InxGa1-xAs/GaAs epitaxial single layers by accurate control of the layer thickness. The model developed differs from previous models since the I...

    G. Macpherson, P. J. Goodhew in MRS Online Proceedings Library (1996)

  5. No Access

    Article

    Interdiffusion Enhancement in AlGaAs/GaAs Superlattices in the Presence of Carbon

    The mechanism of C diffusion through short period GaAs-AlGaAs superlattices has been investigated. The diffusion coefficient of C and the interdiffusion rates of the Ga and Al atoms were estimated by analysing...

    Zul Jamal, P J Goodhew in MRS Online Proceedings Library (1993)

  6. No Access

    Article

    Tem Studies of Impurity Induced Defects in GaAs Grown by CBE

    Defects generated from a thin impurity layer between a CBE-grown epilayer and its GaAs substrate have been studied by TEM. Line defects were observed to emerge randomly from the impurity layer in the various <...

    Zul Jamal, P J Goodhew in MRS Online Proceedings Library (1993)

  7. No Access

    Article

    The Structure of GaAs Grown by Chemical Beam Epitaxy on Low-Temperature Cleaned Silicon

    Chemical beam epitaxy (CBE) has been used to grow GaAs on silicon with a low defect density after etching in HF followed by a low temperature (600°C) in situ heat treatment. High resolution electron microscopy (H...

    Y. R. **ng, C. J. Kiely, P. J. Goodhew in MRS Online Proceedings Library (1992)

  8. No Access

    Article

    Disordering of a Short Period GaAs-AlGaAs Superlattice by C Diffusion

    Carbon do** of GaAs and AlGaAs is easily carried out during chemical beam epitaxy by controlling the proportions of the precursors trimethylgallium and triethylgallium. The diffusion of C introduced at level...

    Z. Jamal, P. J. Goodhew in MRS Online Proceedings Library (1992)