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  1. No Access

    Article

    The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

    Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many param...

    R. Singh, S. H. Christiansen, O. Moutanabbir, U. Gösele in Journal of Electronic Materials (2010)

  2. Article

    Open Access

    Bulk GaN Ion Cleaving

    Bulk or freestanding GaN is a key material in various devices other than the blue laser diodes. However, the high cost of bulk GaN wafers severely limits the large scale exploitation of these potential technol...

    O. Moutanabbir, U. Gösele in Journal of Electronic Materials (2010)

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  3. No Access

    Article

    Isotope and Dose Effects in Low-Energy H/D Blistering of Silicon: Narrow Operational Window for Ion-Cutting at < 100 nm

    Hydrogen ion blistering has applications in the fabrication of silicon-on-insulator and other devices. Si (001) samples implanted with different fluences of 5 keV H or D ions were rapidly thermal annealed unde...

    O. Moutanabbir, B. Terreault, E. Shaffer, G. G. Ross in MRS Online Proceedings Library (2003)