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  1. No Access

    Article

    MBE Growth and Ultrahigh Temperature Processing of High-Quality AlN Films

    Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found ...

    Z. Y. Fan, G. Rong, N. Newman, David J. Smith… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Targeting epitopes in prostate-specific membrane antigen for antibody therapy of prostate cancer

    Prostate-specific membrane antigen (PSMA) is a target for immunotherapy of prostate cancer. It has been shown that antibodies against PSMA inhibited the in vivo growth of LNCaP tumor. In the present study, monocl...

    Y Kinoshita, K Kuratsukuri, N Newman… in Prostate Cancer and Prostatic Diseases (2005)

  3. No Access

    Article

    Heterocyclic amines and genotype of N-acetyltransferases as risk factors for prostate cancer

    A variety of carcinogenic heterocyclic amines are produced during the cooking of meat at high temperatures. These carcinogens are metabolized by N-acetyltransferases (NAT), which are polymorphic in the population...

    P M Rovito Jr, P D Morse, K Spinek, N Newman… in Prostate Cancer and Prostatic Diseases (2005)

  4. No Access

    Article

    Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid

    The use of boron as a sintering aid reduces the sintering temperature, enhances the sintering density, and improves the microwave properties of Ba(Cd1/3Ta2/3 )O3 ceramic dielectrics. Observations by transmission ...

    Shaojun Liu, Jian Sun, Richard Taylor, David J. Smith… in Journal of Materials Research (2004)

  5. No Access

    Article

    Electron microscopy characterization of Ba(Cd1/3Ta2/3)O3 microwave dielectrics with boron additive

    The microstructure of Ba(Cd1/3Ta2/3)O3 ceramics with boron additive was investigated by high-resolution and analytical electron microscopy. Superlattice reflections were present at positions of (h ± 1/3, k ± 1/3,...

    J. Sun, Shaojun Liu, N. Newman, M. R. McCartney… in Journal of Materials Research (2004)

  6. No Access

    Article

    Ordered Structures in Ba(Cd1/3Ta2/3)O3 Microwave Ceramics: A Transmission Electron Microscopy Study

    Ordered structures of Ba(Cd1/3Ta2/3)O3 ceramics with and without boron additive were investigated systemically by electron diffraction and high resolution transmission electron microscopy. The results showed a we...

    J. Sun, S. J. Liu, N. Newman, David. J. Smith in MRS Online Proceedings Library (2004)

  7. No Access

    Article

    Theoretical and Experimental Study of Barium Zinc-Cadmium Tantalate-based Microwave Dielectrics

    Single-phase Ba(Cd1/3Ta2/3)O3 ceramics have been produced using conventional powder processing methods. In our initial investigations, 2wt% ZnO powder was added to act as a sintering aid since a high-density cera...

    Shaojun Liu, Mark Van Schilfgaarde, Jian Sun, Louisa Badd… in MRS Online Proceedings Library (2004)

  8. No Access

    Article

    Synthesis and characterization of high quality ferromagnetic Cr-doped GaN and AlN thin films with Curie temperatures above 900K

    Reactive MBE growth was used to synthesize ferromagnetic Cr-doped GaN and AlN thin films with Curie temperatures above 900K. 2% Cr-doped GaN and 7% Cr-doped AlN were found to have a saturation magnetization mo...

    Stephen Y. Wu, H. X. Liu, Lin Gu, R. K. Singh… in MRS Online Proceedings Library (2003)

  9. No Access

    Article

    Epitaxial Growth of BaZn1/3Ta2/3O3 Thin-Films for Microwave Applications

    BaZn1/3Ta2/3O3 (BZT) ceramics are widely used in current microwave communication applications due to the material’s large-dielectric constant (εr > 25), ultra-low loss tangent (tan δ < 2×10−5 at 2 GHz) and a near...

    G. Rong, L. Tsakalakos, J. Browning, N. Newman in MRS Online Proceedings Library (1999)

  10. No Access

    Article

    Role of Ni and Zr do** on the electrical, optical, magnetic, and structural properties of barium zinc tantalate ceramics

    Properties of Ni- and Zr-doped Ba(Zn1/3Ta2/3)O3 ceramics are reported. The nickel ion has an effective paramagnetic moment of 3.22 ± 0.05. Optical spectra of Ni-doped Ba(Zn1/3Ta2/3)O3 are dominated by discrete in...

    G. Rong, N. Newman, B. Shaw, D. Cronin in Journal of Materials Research (1999)

  11. No Access

    Article

    Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition

    Thin films of AlN and GaN were grown by pulsed laser deposition on c-plane sapphire substrates. It is demonstrated that the structure and surface morphology of layers can actively be controlled by adjusting th...

    G. S. Sudhir, H. Fujii, W. S. Wong, C. Kisielowski… in Journal of Electronic Materials (1998)

  12. No Access

    Chapter

    Introduction: Evaluation of Cruciate Ligament Prostheses — Critique of Current Concepts and Procedures

    Many studies have been published on ligament replacements over the past century, and the various research groups have voiced very conflicting opinions. To date none of the available reconstruction procedures h...

    L’H. Yahia, N. Hagemeister, G. Drouin, C. H. Rivard… in Ligaments and Ligamentoplasties (1997)

  13. No Access

    Article

    Properties of Homoepitaxially MBE-Grown GaN

    Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near band-edge region for epita...

    T. Suski, J. Krueger, C. Kisielowski, P. Phatak… in MRS Online Proceedings Library (1996)

  14. No Access

    Article

    Structural Defects in Heteroepitaxial and Homoepitaxial GaN

    The microstructure and characteristic defects of heteroepitaxial GaN films grown on sapphire using molecular beam epitaxy (MBE) and metal-organic-chemical-vapor-deposition (MOCVD) methods and of homoepitaxial ...

    Zuzanna Liliental-Weber, S. Ruvimov, CH. Kisielowski… in MRS Online Proceedings Library (1995)

  15. No Access

    Article

    The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy

    Since the growth of GaN using molecular beam epitaxy (MBE) occurs under metastable growth conditions, activated nitrogen is required to drive the forward synthesis reaction. In the process of exciting the nitr...

    T. C. Fu, N. Newman, E. Jones, J. S. Chan, X. Liu… in Journal of Electronic Materials (1995)

  16. No Access

    Chapter

    1.54-µm Photoluminescence from Er-Implanted A1N & GaN

    The study of rare-earth-doped III-V semiconductors has generated interest because of the potential for producing efficient, room temperature, electrically excited, sharp intra-4f rare-earth emissions for optoelec...

    R. G. Wilson, R. N. Schwartz, C. R. Abernathy… in Wide Band Gap Electronic Materials (1995)

  17. No Access

    Article

    Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy

    Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n...

    J. S. Chan, T. C. Fu, N. W. Cheung, N. Newman, X. Liu… in MRS Online Proceedings Library (1994)

  18. No Access

    Article

    Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy

    Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have rece...

    N. Newman, T. C. Fu, X. Liu, Z. Liliental-Weber, M. Rubin… in MRS Online Proceedings Library (1994)

  19. No Access

    Article

    Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

    Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Ba...

    J. Chan, T. Fu, N. W. Cheung, J. Ross, N. Newman… in MRS Online Proceedings Library (1993)

  20. No Access

    Article

    First direct observation of EL2-like defect levels in annealed LT-GaAS

    Nonstoichiometric arsenic-rich GaAs grown at low temperatures by molecular beam epitaxy (LT-GaAs) has been found to be semi-insulating after high-temperature annealing. The origin of this technologically impor...

    N. D. Jäger, A. K. Verma, P. Dreszer, N. Newman… in Journal of Electronic Materials (1993)

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