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Article
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature...
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Book
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Chapter
Hot Electron Instabilities in QWs: Acoustoelectric Effect and Two-Stream Plasma Instability
In this paper we discuss two types of instabilities in two-dimensional semiconductor structures when the electron drift velocity, in an applied electric field, is in excess of the velocity of the acoustic mode...
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Chapter
Negative Differential Resistance, High Field Domains and Microwave Emission in GaAs Multi-Quantum Wells
Experimental results presented in this work are concerned with high longitudinal electric field transport in n-type modulation doped GaAs/AlGaAs multiple quantum wells. Negative differential resistance with accom...
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Chapter
NDR, Hot Electron Instabilities and Light Emission in LDS
It is well known that negative differential resistance, NDR, in bulk material can occur as a result of mixed scattering1,2, non-parabolicity2,3, intervalley transfer4,5, impurity barrier capture6,7 and other esot...
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Chapter and Conference Paper
Epa Analysis of Frequency Dependent Loss Data For a-Ge and a-Si
There have recently been several improvements of ac Hop** conductivity theory. Movaghar and co-workers 1,2 Develop a rndom walk model. In the “extended pair approximation” Summerfield and Butcher3,4 analyse the...