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  1. No Access

    Article

    Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

    The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature...

    A. Yildiz, S. B. Lisesivdin, M. Kasap, S. Ozcelik, E. Ozbay, N. Balkan in Applied Physics A (2010)

  2. No Access

    Article

    Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

    We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga1-x In ...

    Y. Sun, A. Erol, M. Yilmaz, M. C. Arikan, B. Ulug… in Optical and Quantum Electronics (2008)

  3. No Access

    Article

    Determination of the alloy scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from magnetotransport measurements

    The results of magnetotransport measurements are used to investigate the scattering mechanisms and hence to determine the alloy disorder scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As hete...

    E. Tiraş, S. Altinöz, M. Cankurtaran, H. Çelik, N. Balkan in Journal of Materials Science (2005)

  4. No Access

    Article

    Super-radiant surface emission from a quasi-cavity hot electron light emitter

    The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to the layers of a Ga1−xAlxAs p-n junctio...

    A. O'brien, N. Balkan, A. Boland-Thoms, M. Adams, A. Bek… in Optical and Quantum Electronics (1999)

  5. No Access

    Chapter

    Hot Electron Light Emitting Semiconductor Heterojunction Devices (Hellish) — Type — 1 and Type — 2

    One of the draw-backs of the conventional light emitters appears to be that the light emission is confined to a small region of the facets of the devices1. Thus, the compatibility in generic integration technolog...

    N. Balkan, A. da Cunha, A. O’Brien, A. Teke, R. Gupta… in Hot Carriers in Semiconductors (1996)

  6. No Access

    Chapter

    Acoustic Phonon Assisted Energy Relaxation of 2D Electron Gases

    The subject of acoustic phonon assisted energy relaxation in 2D systems has had a considerable amount of attention over the past fifteen years1-4. A number of groups have worked on heterojunctions and have found ...

    A. J. Vickers, N. Balkan, M. Cankurtaran, H. Çelik in Hot Carriers in Semiconductors (1996)

  7. No Access

    Chapter

    Hot Electron Light Emission from Gunn Domains in Longitudinally Biased GaAs p — n Junctions and in n- GaAs Epilayers

    Hot carrier Light emission from GaAs, biased in the Negative Differential Resistance region has been observed since the mid-sixties.1. Most earlier devices investigated were of dimensions in the 1 mm range. With ...

    N. Balkan, M. Hostut, T. de Kort, A. Straw in Hot Carriers in Semiconductors (1996)

  8. No Access

    Book

    Negative Differential Resistance and Instabilities in 2-D Semiconductors

    N. Balkan, B. K. Ridley, A. J. Vickers in NATO ASI Series (1993)

  9. No Access

    Chapter

    Hot Electron Instabilities in QWs: Acoustoelectric Effect and Two-Stream Plasma Instability

    In this paper we discuss two types of instabilities in two-dimensional semiconductor structures when the electron drift velocity, in an applied electric field, is in excess of the velocity of the acoustic mode...

    Rita Gupta, N. Balkan, B. K. Ridley in Negative Differential Resistance and Insta… (1993)

  10. No Access

    Chapter

    Negative Differential Resistance, High Field Domains and Microwave Emission in GaAs Multi-Quantum Wells

    Experimental results presented in this work are concerned with high longitudinal electric field transport in n-type modulation doped GaAs/AlGaAs multiple quantum wells. Negative differential resistance with accom...

    A. Straw, A. Da Cunha, N. Balkan… in Negative Differential Resistance and Insta… (1993)

  11. No Access

    Chapter

    NDR, Hot Electron Instabilities and Light Emission in LDS

    It is well known that negative differential resistance, NDR, in bulk material can occur as a result of mixed scattering1,2, non-parabolicity2,3, intervalley transfer4,5, impurity barrier capture6,7 and other esot...

    A. Da Cunha, A. Straw, N. Balkan in Negative Differential Resistance and Insta… (1993)

  12. No Access

    Chapter

    Hot Electron Capture in GaAs MQW: NDR and Photo-Emission

    We present experimental results on the hot electron distribution and energy relaxation process in doped GaAs/AlGaAs quantum wells. The experiments make use of steady state hot electron photoluminescence spectr...

    N. Balkan, B. K. Ridley in Properties of Impurity States in Superlattice Semiconductors (1988)

  13. No Access

    Chapter and Conference Paper

    Epa Analysis of Frequency Dependent Loss Data For a-Ge and a-Si

    There have recently been several improvements of ac Hop** conductivity theory. Movaghar and co-workers 1,2 Develop a rndom walk model. In the “extended pair approximation” Summerfield and Butcher3,4 analyse the...

    N. Balkan, P. N. Butcher, W. R. Hogg… in Proceedings of the 17th International Conf… (1985)