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Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature...
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Chapter and Conference Paper
Epa Analysis of Frequency Dependent Loss Data For a-Ge and a-Si
There have recently been several improvements of ac Hop** conductivity theory. Movaghar and co-workers 1,2 Develop a rndom walk model. In the “extended pair approximation” Summerfield and Butcher3,4 analyse the...