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Article
Electrically tunable magnetic fluctuations in multilayered vanadium-doped tungsten diselenide
Fluctuations are ubiquitous in magnetic materials and can cause random telegraph noise. Such noise is of potential use in systems such as spiking neuron devices, random number generators and probability bits. ...
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Article
Open AccessMultiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation
Two-dimensional (2D) layered materials such as graphene, molybdenum disulfide (MoS2), tungsten disulfide (WSe2), and black phosphorus (BP) provide unique opportunities to identify the origin of current fluctuatio...
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Chapter and Conference Paper
A Method for Nocturia Monitoring in Smart Home Using Decision Trees
Nocturia is widely regarded as urological with the symptom of the need to wake during bedtime one or more times, which causes to sleep loss. In this paper, we presented the method for nocturia monitoring with ...
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Article
Open AccessCoulomb drag transistor using a graphene and MoS2 heterostructure
Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layer...
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Article
Open AccessHigh-mobility junction field-effect transistor via graphene/MoS2 heterointerface
Monolayer molybdenum disulfide (MoS2) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have be...
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Article
Open AccessSoft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2
Quantum localization–delocalization of carriers are well described by either carrier–carrier interaction or disorder. When both effects come into play, however, a comprehensive understanding is not well establ...
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Article
Open AccessProbing defect dynamics in monolayer MoS2 via noise nanospectroscopy
Monolayer molybdenum disulfide (MoS2) has received intense interest as a strong candidate for next-generation electronics. However, the observed electrical properties of monolayer MoS2 exhibit several anomalies: ...
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Article
Nitrogen-plasma treatment of parallel-aligned SnO2-nanowire field-effect transistors
Nitrogen (N2)-plasma treatment and polymethylmethacrylate (PMMA) passivation were carried out to stabilize the electrical properties of parallel-aligned tin-dioxide (SnO2)-nanowire field-effect transistors. Treat...
