Skip to main content

2 Result(s)

within Maik Wiemer Remove this filter

and

  1. No Access

    Article

    Aluminum–germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes

    Eutectic aluminum–germanium wafer bonding was used to fabricate (AlGaIn)N thin-film light-emitting diodes (LEDs). Wafer bonding was carried out on 2″ wafer level at a bond temperature of 470 °C using patterned...

    Christian Goßler, Michael Kunzer, Mario Baum, Maik Wiemer… in Microsystem Technologies (2013)

  2. No Access

    Article

    Implementation of a low temperature wafer bonding process for acceleration sensors

    The paper describes a low temperature bond process based on an oxygen plasma pretreatment followed by 200°C and 400°C annealing which was to be integrated in our technological process flow to produce micromech...

    Maik Wiemer, Thomas Otto, Thomas Gessner, Karla Hiller… in MRS Online Proceedings Library (2011)