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  1. No Access

    Article

    Hybrid Сoncentrator-Planar Photovoltaic Module with Heterostructure Solar Cells

    The paper presents a promising solution for photovoltaic modules that provides overcoming the main conceptual limitation for the concentrator concept in photovoltaics—the impossibility to convert diffused (sca...

    M. Z. Shvarts, A. V. Andreeva, D. A. Andronikov, K. V. Emtsev… in Technical Physics Letters (2023)

  2. No Access

    Article

    Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell

    The efficiency of GaInP/GaAs/InxGa1 – xAs triple-junction solar cells obtained by replacing (in the widely used “classical” GaInP/GaAs/Ge heterostructure) the lower germanium with InxGa1 – xAs subcell formed usin...

    M. A. Mintairov, V. V. Evstropov, S. A. Mintairov… in Technical Physics Letters (2023)

  3. No Access

    Article

    A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm

    GalnP-based laser power converters (LPC) structure grown by MOVPE and device chip design have been optimized for operation under high-power lasers of the green–red spectral range. Light I–V curves records have sh...

    S. A. Mintairov, V. V. Evstropov, M. A. Mintairov… in Technical Physics Letters (2023)

  4. No Access

    Article

    High-Efficiency GaInP/GaAs Photoconverters of the 600 nm Laser Line

    Optimized photoconverters for operation under high-power laser radiation in the green-red spectral range based on MOCVD-grown GaInP/GaAs heterostructures are fabricated. The Au(Ge)/Ni/Au and Pd/Ge/Au contact s...

    S. A. Mintairov, A. V. Malevskaya, M. A. Mintairov… in Technical Physics Letters (2023)

  5. No Access

    Article

    Investigation of the Photoelectric Characteristics of GaAs Solar Cells with Different InGaAs Quantum Dot Array Positioning in the i-Region

    The effect of positioning of the In0.8Ga0.2As quantum dots (QDs) array in the i-region of the solar cell (SC) on its photogenerated current and dark saturation currents, which determine the device operating volta...

    R. A Salii, M. A. Mintairov, S. A. Mintairov… in Technical Physics Letters (2023)

  6. No Access

    Article

    Temperature Modes and Mechanical Stresses in Photovoltaic Converters of Concentrated Sunlight

    In photovoltaic converters of concentrated sunlight, the thermal flow is directed from the photoactive region (p–n junction) to a heat-spreading basement through the substrate. The heat sink transfers the excess ...

    A. N. Panchak, M. Z. Shvarts in Technical Physics (2023)

  7. No Access

    Article

    High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors

    Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostractures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optica...

    A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii… in Semiconductors (2023)

  8. No Access

    Article

    GaSb-Based Thermophotovoltaic Converters of IR Selective Emitter Radiation

    GaSb-based thermophotovoltaic converters for a selective mantle-type Y2O3 emitter coated with rare-earth oxides Er2O3/Yb2O3 are investigated. Matching of the converter spectral response with the peak emitter-radi...

    V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, M. V. Nakhimovich… in Semiconductors (2021)

  9. No Access

    Article

    Infrared (850 nm) Light-Emitting Diodes with Multiple InGaAs Quantum Wells and “Back” Reflector

    Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells in the region generating radiation grown by the MOCVD technique has been carried ...

    A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov… in Semiconductors (2021)

  10. No Access

    Article

    Increasing the Efficiency of 520- to 540-nm Laser Radiation Photovoltaic Converters Based on GaInP/GaAs Heterostructures

    Photovoltaic converters of 520- to 540-nm laser radiation based on GaInP/GaAs heterostructures have been studied. It is established that a decrease in the degree of GaInP layer ordering by introduction of anti...

    S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts… in Technical Physics Letters (2021)

  11. No Access

    Article

    High-Speed Photodetectors for the 950–1100 nm Optical Range Based on In0.4Ga0.6As/GaAs Quantum Well-Dot Nanostructures

    High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dot (QWD) nanostructures with the frontal-end and back-end input of radiation have been studied. A PD with 40 rows of QWDs exhibited a spectral...

    S. A. Mintairov, I. M. Gadzhiev, N. A. Kalyuzhnyi… in Technical Physics Letters (2020)

  12. No Access

    Article

    Laser Power Converter Modules with a Wavelength of 809–850 nm

    We consider a high-efficiency photovoltaic module optimized for conversion of monochromatic radiation with a wavelength of 809–850 nm. The module includes four photovoltaic converters with a total area of 16 cm2,...

    V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, N. S. Potapovich… in Technical Physics (2020)

  13. No Access

    Article

    Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them

    InAs and In0.8Ga0.2As quantum dots in a GaAs matrix as well as GaAs solar cells with quantum dots of both types in the i-region are obtained by metalorganic vapor-phase epitaxy. As a result of investigations by p...

    R. A. Salii, S. A. Mintairov, A. M. Nadtochiy, V. N. Nevedomskii… in Semiconductors (2020)

  14. No Access

    Article

    The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters

    The electroluminescence spectra and the dependences of the open circuit voltage on the photogenerated current are studied for GaAs solar cells the p–n junction of which contained various numbers of rows (r) of qu...

    M. A. Mintairov, V. V. Evstropov, S. A. Mintairov… in Technical Physics Letters (2020)

  15. No Access

    Article

    Effects of Do** of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters

    The current–voltage characteristics of InxGa1 –xAs/GaAs metamorphic photovoltaic converters with built-in n-InGaAs/InAlAs Bragg reflectors are studied at an indium content of x = 0.025–0.24. The series resistance...

    V. M. Emelyanov, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Nakhimovich… in Semiconductors (2020)

  16. No Access

    Article

    Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm)

    Solar cells based on a new type of nanostructure (quantum well-dots) have been studied. These quantum well-dots (QWDs) are In0.4Ga0.6As layers with marked composition and thickness modulations. The energies of th...

    S. A. Mintairov, N. A. Kalyuzhnyi, M. V. Maksimov… in Technical Physics Letters (2020)

  17. No Access

    Article

    Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors

    The influence exerted by the carrier concentration in the range (1–50) × 1014 cm–3 in n-4H-SiC chemical-vapor deposited (CVD) epitaxial layers on the spectral characteristics of UV photodetectors with Cr Schottky...

    E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova… in Semiconductors (2020)

  18. No Access

    Chapter

    III–V Solar Cells and Concentrator Arrays

    Semiconductor allow solving the problems of controlling the fundamental parameters of semiconductor devices owing to the possibility of change in the electronic band structure, and refractive indices of a ...

    Zh. I. Alferov, V. M. Andreev, M. Z. Shvarts in High-Efficient Low-Cost Photovoltaics (2020)

  19. No Access

    Article

    Increasing the Photocurrent of a Ga(In)As Subcell in Multijunction Solar Cells Based on GaInP/Ga(In)As/Ge Heterostructure

    Spectral characteristics of the Ga(In)As subcell of triple-junction GaInP/Ga(In)As/Ge solar cells have been experimentally and theoretically studied. It is established that the use of a wide-bandgap “window” l...

    S. A. Mintairov, V. M. Emel’yanov, N. A. Kalyuzhnyi… in Technical Physics Letters (2019)

  20. No Access

    Article

    Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting

    p–i–n GaAs photovoltaic converters of modulated laser radiation (810–830 nm) transferring both energy (laser power) and information signal were developed. The capacitance and frequency characteristics of the phot...

    V. M. Emelyanov, P. V. Pokrovskiy, N. A. Kalyuzhnyy, M. V. Nakhimovich… in Semiconductors (2019)

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