![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
FOXO3 is essential for CD44 expression in pancreatic cancer cells
Pancreatic ductal adenocarcinoma (PDAC) is one of the most fatal types of cancer and the 5-year survival rate is only 5%. Several studies have suggested that cancer stem cells (CSCs) are thought to be involved...
-
Article
Synthesis of single-walled carbon nanotubes in mesoporous silica film and their field emission property
We have succeeded in direct synthesis of single-walled carbon nanotubes (SWNTs) on a conductive substrate coated with a 3D mesoporous silica film, and observed the field emission. Co catalysts for the growth o...
-
Article
Processing of vacuum microelectronic devices by focused ion and electron beams
Localized physical and chemical reactions induced by focused ion and electron beams, i.e. dual beams, have been used to fabricate field emitters (FEs) and their arrays, field-emitter arrays (FEAs), without mas...
-
Article
Micellar structure of an oligopeptide surfactant “trimeric N -dodecanoyl-L-proline potassium salt” in aqueous solution – small-angle neutron scattering study
Structures of the micelles which are formed by the chiral oligopeptide surfactant N-dodecanoyl-L-proline tripeptide anions have been examined using small-angle neutron scattering spectral analysis. Results show ...
-
Article
ESR studies of radicals generated by ultrasonic irradiation of lignin solution. An application of the spin trap** method
An electron spin resonance (ESR) method combined with a spin trap** reagent was successfully applied to trap and characterize unstable radicals which were generated by ultrasonic irradiation of dimethylsulf...
-
Article
High-Rate Growth of Stable a-Si:H
Correlation between the gas phase species in silane plasma measured by mass spectrometry and the properties of hydrogenated amorphous silicon (a-Si:H) films deposited by plasma enhanced chemical vapour deposit...
-
Article
Substrate-assisted laser patterning of indium tin oxide thin films
Maskless laser patterning of indium tin oxide (ITO) thin films was studied by the use of a diode-pumped Q-switched Nd:YLF laser. The ITO films were sputter-deposited either on lime glass, the standard substra...
-
Chapter and Conference Paper
Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation
The charge collection induced by incident particles was estimated by the 3-dimensional device simulation and the quantitative evaluation method using the nuclear microprobe. The role of the buried p +layer was we...
-
Article
Suppression of Ion-Induced Charge Collection by High-Energy B+-Implanted Layer
Control of charge carrier collection by high-energy boron-implanted layers has been investigated to clarify the validity of buried well structures against soft errors in dynamic random-access memories (DRAMs) ...
-
Article
Effect of pressure onT c in La2- x Ba x CuO4 withx=0.125
The superconducting transition temperature,T c , of La2−x Ba x CuO4 has been measured under high pressure up to 8 GPa.T c ...
-
Article
Surface cleaning of metals by pulsed-laser irradiation in air
The surface-cleaning effect of metals was investigated using KrF-excimer-laser irradiation of metal surfaces in air. The laser-induced cleaning of copper, stainless steel and aluminum surfaces was studied. It ...
-
Article
Laser chemical processing of magnetic materials for recording-head application
A laser-induced thermochemical reaction has been used to etch single crystalline magnetic ferrite for industrial application to recording-head processing. Scanning focused Ar-ion laser irradiation to ferrite i...
-
Article
Comparison of laser-induced etching behavior of III–V compound semiconductors
Laser-induced maskless etching of III–V compound semiconductors (InSb, GaAs, and InP) in a KOH aqueous solution by irradiation with a focused argon-ion laser has been investigated to obtain high etching rates ...
-
Article
Simulator for Dynamic Ion Beam Mixing
Dynamic ion beam mixing (simultaneous deposition and ion beam irradiation) was simulated for the first time. Standard Monte Carlo (MC) programs do not account for the steady change of target geometry caused by...
-
Article
Direct writing of Ag-lines on Mn-Zn ferrite by laser-induced thermal decomposition by CH3COOAg
Laser-induced direct writing of silver lines on a ferrite surface from a silver acetate (CH3COOAg) thin layer has been investigated. The deposition is a thermochemical process and the threshold temperature for th...
-
Article
Laser-Induced Deposition of Buried Insulator Lines in Mn-Zn Ferrite
Maskless etching of single crystalline Mn-Zn ferrite (MnO:ZnO:Fe2O3 = 31:17:52) has been investigated in a SiCl4 atmosphere by Ar+ laser irradiation. The ferrite substrate can be thermochemically etched by a sing...
-
Article
Localized Crystallinity Measurement of Single-Crystal Ge on Insulator by Raman Polarization
Agglomeration has occurred during zone-melting to obtain single-crystal germanium layers because of insufficient wettability between germanium and silicon-dioxide. The agglomeration could be suppressed by cont...
-
Article
Laser-induced dry chemical etching of Mn-Zn ferrite in CCl2F2 atmosphere
Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl2F2) by Ar+-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etchin...
-
Article
Dental variability inSaimiri and the taxonomic status ofNeosaimiri fieldsi, an early squirrel monkey from La Venta, Colombia
Neosaimiri fieldsi, from the South American middle Miocene locality of La Venta, is represented by a relatively complete mandible and dentition that strongly resembles that of extantSaimi...
-
Article
Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition
Microprobe photoluminescence (PL) measurements at 77 K were used to study the effect of the GaAs layer thickness on optical quality and variations in strain in GaAs/Si containing microcracks. PL peak intensiti...