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  1. No Access

    Article

    InGaN-Channel FETs - Growth, Technology and Characteristics

    Making use of the polar nature of III-nitride heterostructures, a new FET device concept is proposed. The structure contains an InGaN QW channel sandwiched in between two GaN barrier layers. The charge inthis ...

    E. Kohn, I. Daumiller, M. Neuburger, M. Seyboth… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    GaN Homoepitaxy for Device Applications

    Epitaxial growth on GaN single bulk crystals sets new standards in GaN material quality. The outstanding properties provide new insights into fundamental material parameters (e.g. lattice constants, exciton bi...

    M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Substrates for wide bandgap nitrides

    Different substrates for gallium nitride growth are discussed. The commercially relevant substrates, silicon carbide and sapphire, and the two most promising alternatives, silicon and gallium nitride, are comp...

    M. Seyboth, S.-S. Schad, M. Scherer… in Journal of Materials Science: Materials in… (2002)

  4. Article

    GaN Homoepitaxy for Device Applications

    Epitaxial growth on GaN single bulk crystals sets new standards in GaN material quality. The outstanding properties provide new insights into fundamental material parameters (e.g. lattice constants, exciton bi...

    M. Kamp, C. Kirchner, V. Schwegler… in MRS Internet Journal of Nitride Semiconduc… (1999)

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  5. No Access

    Article

    Ion Scattering Studies of Defects in Gan Thin Films on C-Oriented Sapphire

    Epitaxial GaN films grown by metal organic vapour phase epitaxy (MOVPE) or gas source molecular beam epitaxy (GSMBE) have opened up new applications in short wavelength photonic devices as well as high-power a...

    B. Holländer, S. Mantl, M. Mayer, C. Kirchner… in MRS Online Proceedings Library (1998)

  6. No Access

    Article

    Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

    We correlate structure analyzed by transmission electron microscopy with photo- and cathodoluminescence studies of GaN/Al2O3(0001) and GaN/SiC(0001) and show that an additional UV line at 364nm/3.4eV can be conne...

    M. Albrecht, S. Christiansen, G. Salviati… in MRS Online Proceedings Library (1997)

  7. No Access

    Article

    On Surface Cracking of Ammonia for MBE Growth of GaN

    With the use of ammonia as nitrogen precursor for Group III-Nitrides in an on surface cracking (OSC) approach, MBE becomes a serious competitor to MOVPE. Homoepitaxial GaN exhibits record linewidths of 0.5 meV...

    M. Kamp, M. Mayer, A. Pelzmann, K. J. Ebeling in MRS Online Proceedings Library (1996)

  8. No Access

    Article

    NH3 as Nitrogen Source in MBE growth of GaN

    We report on the growth of GaN in GSMBE using NH3 as nitrogen source. Special focus will be on the NH3 cracking, where we applied an On Surface Cracking technique (OSC). Using OSC we achieve photoluminescence lin...

    M. Kamp, M. Mayer, A. Pelzmann, A. Thies, H. Y. Chung… in MRS Online Proceedings Library (1995)

  9. No Access

    Article

    Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100)

    The crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(10...

    J. Geurts, J. Finders, H. Münder, M. Kamp, M. Oehlers… in MRS Online Proceedings Library (1989)