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  1. No Access

    Chapter

    Nitride Microcavities and Single Quantum Dots for Classical and Non-classical Light Emitters

    Microcavities with InGaN quantum wells or GaN-based quantum dots as active medium are building blocks of electrically-driven, low-threshold surface-emitting lasers or single photon emitters in the visible-to-U...

    G. Schmidt, C. Berger, A. Dadgar, F. Bertram, P. Veit… in Semiconductor Nanophotonics (2020)

  2. Article

    Open Access

    Electronic excitations stabilized by a degenerate electron gas in semiconductors

    Excitons in semiconductors and insulators consist of fermionic subsystems, electrons and holes, whose attractive interaction facilitates bound quasiparticles with quasi-bosonic character. In the presence of a ...

    C. Nenstiel, G. Callsen, F. Nippert, T. Kure, S. Schlichting… in Communications Physics (2018)

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  3. No Access

    Article

    Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR

    Resonant coupling of an optical mode confined within a microcavity and an emitter is the basic prerequisite for the observation of Bose-Einstein condensation phenomena and the development of novel optical devi...

    A. Franke, B. Bastek, S. Sterling, O. August, S. Petzold… in MRS Online Proceedings Library (2012)

  4. No Access

    Article

    Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors

    Properties of InAlN/GaN heterostructure field-effect transistors with thermally oxidized (750°C, 2 min) InAlN barrier layers of different compositions (InN = 13%, 17%, and 21%) were evaluated. The saturation d...

    P. Kordoš, M. Mikulics, R. Stoklas, K. Čičo, A. Dadgar… in Journal of Electronic Materials (2012)

  5. No Access

    Article

    Metalorganic chemical vapor phase epitaxy and structural properties of Ga1-xPxN on GaN/Si(111) substrates

    GaPN-layers with phosphorus concentrations up to 4.4% were grown on GaN/Si(111) substrates by metal organic vapour phase epitaxy. The growth temperature and phosphine flows were varied in order to investigate ...

    K. Fehse, A. Dadgar, P. Veit, J. Bläsing, A. Krost in Applied Physics A (2006)

  6. No Access

    Article

    A low-temperature evaporation route for ZnO nanoneedles and nanosaws

    A low-temperature (550 °C) catalyst-free route has been applied to fabricate ZnO nanoneedles and nanosaws via evaporation of metallic Zn powder. The nanoneedles are vertically aligned on GaN(0001)/Si(111) subs...

    H.J. Fan, R. Scholz, A. Dadgar, A. Krost, M. Zacharias in Applied Physics A (2005)

  7. No Access

    Chapter and Conference Paper

    Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy

    The dislocation configuration in epitaxial ZnO layers grown by metal organic vapor phase epitaxy (MOVPE) was analyzed by transmission electron microscopy. Misfit dislocations and the majority of threading disl...

    E. Müller, D. Livinov, D. Gerthsen… in Zinc Oxide — A Material for Micro- and Opt… (2005)

  8. No Access

    Article

    Hexagonal-arranged ZnO Nanowire Arrays by Using Au Nanohole Membranes as Fabrication Template

    A new template method for large-scale fabrication of hexagonally patterned and vertically aligned ZnO nanowires is demonstrated. The process involves a novel type of metal membrane, a gold catalyst template pr...

    H. J. Fan, W. Lee, K. Nielsch, M. Zacharias, A. Dadgar… in MRS Online Proceedings Library (2004)

  9. No Access

    Chapter

    Strains and Stresses in GaN Heteroepitaxy -- Sources and Control

    We present a study of the sources of strain in GaN heteroepitaxy by in- and ex-situ measurement techniques. With an in-situ curvature measurement technique the strain development can be directly correla...

    A. Dadgar, R. Clos, G. Strassburger, F. Schulze, P. Veit… in Advances in Solid State Physics (2004)

  10. No Access

    Article

    Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods

    The electrical activity of iron in Fe- doped, and in Si and Mg co-doped GaN layers grown on sapphire substrates by metal organic vapor phase epitaxy was studied as shown by temperature dependent Hall Effect (T...

    H. Witte, K. Fluegge, A. Dadgar, A. Krtschil, A. Krost… in MRS Online Proceedings Library (2003)

  11. Article

    Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Re

    D. Söderström, S. Lourdudoss, A. Dadgar, O. Stenzel… in Journal of Electronic Materials (2001)

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  12. No Access

    Article

    Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe

    Semi-insulating Fe and Ru codoped InP epitaxial layers grown by low-pressure hydride vapor phase epitaxy have been investigated. InP∶Ru and InP∶Fe, Ru layers were grown on p-InP∶Zn andn-InP∶S, substrates, in orde...

    D. Söderström, S. Lourdudoss, A. Dadgar, O. Stenzel… in Journal of Electronic Materials (2001)

  13. No Access

    Article

    Rh: A Dopant With Mid-Gap Levels in InP and InGaAs and Superior Thermal Stability

    We investigate the influence of Rh-do** on electrical properties of InP and InGaAs. Deep level transient spectroscopy carried out on Rh-doped as well as undoped reference samples reveals a single Rh-related ...

    H. Scheffler, B. Srocka, A. Dadgar, M. Kuttler, A. Knecht… in MRS Online Proceedings Library (1993)