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  1. No Access

    Article

    Characteristics of Ag/Bi3.25La0.75Ti3O12/p-Si heterostructure prepared by sol-gel processing

    The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi3.25La0.75Ti3O12 (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formatio...

    H. Wang, M. F. Ren in Journal of Sol-Gel Science and Technology (2007)

  2. No Access

    Article

    Synthesis and ferroelectric properties of SrBi2Ta2O9/Bi4Ti3O12/p-Si multilayer thin films by Sol-Gel

    SrBi2Ta2O9(SBT)/Bi4Ti3O12(BIT) multilayer thin films were prepared on p-Si substrates by Sol-Gel method, the effect of thickness of SBT and annealing temperature on structure, morphology, ferroelectric and fatigu...

    H. Wang, M. F. Ren in Journal of Materials Science: Materials in Electronics (2006)

  3. No Access

    Article

    Effects of oriented growth on properties of Ag/Bi4Ti3O12/p-Si heterostructure prepared by Sol-Gel method with rapid thermal annealing techniques

    Ag/Bi4Ti3O12/p-Si heterostructures were fabricated by Sol-Gel method with rapid thermal annealing techniques. The effects of oriented growth on ferroelectric characteristics and electrical properties of Bi4Ti3O12

    H. Wang, M. F. Ren in Journal of Materials Science: Materials in Electronics (2005)

  4. No Access

    Article

    Initial study of strengthening of NiAl–Cr(Mo)–Hf alloys by strong magnetic field

    It was found that after treatment under 10T magnetic field and temperature 900 °C the bending strength of NiAl–Cr(Mo)–Hf alloy is increased by about 75%. The fracture section observation shows that the specime...

    G. J. Ma, C. W. Wu, W. L. Zhou, X. L. Guo, M. F. Ren… in Journal of Materials Research (2005)