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Synthesis and ferroelectric properties of SrBi2Ta2O9/Bi4Ti3O12/p-Si multilayer thin films by Sol-Gel

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Abstract

SrBi2Ta2O9(SBT)/Bi4Ti3O12(BIT) multilayer thin films were prepared on p-Si substrates by Sol-Gel method, the effect of thickness of SBT and annealing temperature on structure, morphology, ferroelectric and fatigue properties of SBT/BIT ferroelectric films were investigated. The SBT/BIT multilayer films annealed at above 600 ∘C were uniform and crack free as well as exhibited no pyrochlore phase. The remanent polarization and the coercive field of SBT/BIT multilayer films both increases with the increase of annealing temperature due to better crystallization and larger grain size. The SBT/BIT multilayer thin films consisting of 1 layer of SBT and 3 layers of BIT annealed above 650 ∘C obtained its best ferroelectric properties with a Pr of 8.1 μC/cm2 and a Ec of 130 kV/cm which is comparable to that of pure BIT films and had a fatigue-free property up to 1011 switching cycles, but Pnv appeared under the cycle field of 175 kV/cm and increased with the decrease of cycle field.

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Authors and Affiliations

  1. Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China

    H. Wang & M. F. Ren

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  1. H. Wang
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  2. M. F. Ren
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Wang, H., Ren, M.F. Synthesis and ferroelectric properties of SrBi2Ta2O9/Bi4Ti3O12/p-Si multilayer thin films by Sol-Gel. J Mater Sci: Mater Electron 17, 165–169 (2006). https://doi.org/10.1007/s10854-006-6757-z

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  • DOI: https://doi.org/10.1007/s10854-006-6757-z

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