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  1. No Access

    Article

    The Dynamics of Core and Outer Micro-turbulence During the L–I–H Confinement Transition on the EAST Superconducting Tokamak

    The dynamics of the core and outer micro-turbulence during the low–intermediate–high (L–I–H) confinement transition have been investigated simultaneously by a tangential CO2 laser collective scattering system on ...

    G. M. Cao, Y. D. Li, Q. Li, X. D. Zhang, P. J. Sun, G. J. Wu… in Journal of Fusion Energy (2015)

  2. No Access

    Article

    The Dynamics of Short-Scale Turbulent Fluctuations During The H–L Back Transition in The EAST Superconducting Tokamak

    The dynamics of the turbulent fluctuations during the H–L back transition have been studied on EAST by a CO2 laser collective scattering system. The limit-cycle oscillation (LCO) regime has been frequently observ...

    G. M. Cao, Y. D. Li, Q. Li, X. D. Zhang, P. J. Sun, G. J. Wu… in Journal of Fusion Energy (2015)

  3. No Access

    Article

    Monitoring System of EAST’s Nuclear Radiation

    Neutron and Gamma detectors have been used to monitor the nuclear radiation in the environment (Jian** in Nucl Electron Detect Technol 19(1), 1999; Chai et al. in Nucl Electron Detect Technol 25(1), 2005), duri...

    G. Z. Liu, L. Q. Hu, G. Q. Zhong, J. P. Long, N. Pu in Journal of Fusion Energy (2014)

  4. No Access

    Article

    Suppression of MHD activity with limiter biasing in the HT-7 tokamak

    We report here the first preliminary results of our limiter biasing experiments performed in the HT-7 tokamak. For this study, a limiter biasing system was designed, constructed and installed on the HT-7 tokam...

    H.W. Lu, J.R. Luo, F.C. Zhong, X.J. Zha, L.Q. Hu in The European Physical Journal D (2012)

  5. No Access

    Article

    Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer

    Charge storage characteristics in an Al/AlN/p-Si metal–insulator–semiconductor (MIS) structure have been investigated by capacitance–voltage and long-term capacitance measurements. Good program/erase behavior ...

    Y.C. Kong, L.Q. Hu, Y.D. Zheng, C.H. Zhou, C. Chen, S.L. Gu, R. Zhang… in Applied Physics A (2008)

  6. No Access

    Article

    Correlation between green luminescence and morphology evolution of ZnO films

    Photoluminescence and atomic force microscopy have been used to characterize ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures. The surface morphology with diff...

    J.D. Ye, S.L. Gu, F. Qin, S.M. Zhu, S.M. Liu, X. Zhou, W. Liu, L.Q. Hu… in Applied Physics A (2005)

  7. No Access

    Article

    MOCVD growth and properties of ZnO films using dimethylzinc and oxygen

    The ZnO films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using dimethylzinc (DMZn) and oxygen. The as-grown film has strong (0002) oriented characteristic, containing the cha...

    J.D. Ye, S.L. Gu, F. Qin, S.M. Zhu, S.M. Liu, X. Zhou, W. Liu, L.Q. Hu… in Applied Physics A (2005)

  8. No Access

    Article

    Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD

    ZnO films were prepared on (0002) sapphire by metal-organic chemical vapor deposition (MOCVD) with fixed Zn and O gas flow rates. The film properties displayed complex dependencies on temperature over the rang...

    J.D. Ye, S.L. Gu, S.M. Zhu, F. Qin, L.Q. Hu, L. Ren, R. Zhang, Y. Shi… in Applied Physics A (2004)

  9. No Access

    Article

    Realization of silicon quantum wires by selective chemical etching and thermal oxidation

    Ultra-fine silicon quantum wires with SiO2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scan...

    J. L. Liu, Y. Shi, F. Wang, Y. Lu, R. Zhang, S. L. Gu, P. Han… in Applied Physics A (1996)