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Article
Realization of silicon quantum wires by selective chemical etching and thermal oxidation
Ultra-fine silicon quantum wires with SiO2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scan...
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Article
Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD
ZnO films were prepared on (0002) sapphire by metal-organic chemical vapor deposition (MOCVD) with fixed Zn and O gas flow rates. The film properties displayed complex dependencies on temperature over the rang...
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Article
Correlation between green luminescence and morphology evolution of ZnO films
Photoluminescence and atomic force microscopy have been used to characterize ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures. The surface morphology with diff...
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Article
MOCVD growth and properties of ZnO films using dimethylzinc and oxygen
The ZnO films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using dimethylzinc (DMZn) and oxygen. The as-grown film has strong (0002) oriented characteristic, containing the cha...
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Article
Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer
Charge storage characteristics in an Al/AlN/p-Si metal–insulator–semiconductor (MIS) structure have been investigated by capacitance–voltage and long-term capacitance measurements. Good program/erase behavior ...