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Article
Effect of Fluorine on the Diffusion of Boron in Amorphous Silicon
Fluorine and boron co-implantation within amorphous silicon has been studied in order to meet the process challenges regarding p+ ultra-shallow junction formation. Previous experiments have shown that fluorine ca...
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Article
Electrical and Structural Characterization of Boron Implanted Silicon Following Laser Thermal Processing
One alternative to conventional rapid thermal annealing (RTA) of implants for ultra-shallow junction formation is that of laser annealing. Laser thermal processing (LTP) incorporates an excimer pulsed laser ca...
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Article
Enhanced Boron Diffusion in Amorphous Silicon
In prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion i...
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Article
Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation
The interaction between boron and excess silicon interstitials caused by ion implantation hinders the formation of ultra-shallow, low resistivity junctions. Previous studies have shown that fluorine reduces bo...
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Article
The Effect of Impurities on Diffusion and Activation of ion Implanted Boron in Silicon
The interaction between boron and silicon interstitials caused by ion implant damage is a physical process which hinders the formation of ultra-shallow, low resistivity junctions. The possibility of mitigating...
