![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Polyimide-fixed GaAs Island structure prepared using plasma etching technique
GaAs micromachining technologies were used for fabricating polyimide-fixed thermally insulated GaAs Island structure. This structure, fully compatible with GaAs Heterostructure Field Effect Transistor (HFET) t...
-
Article
Advanced patterning techniques for nanodevice fabrication
The key elements in the fabrication of future devices are lithography and pattern transfer. The continuous advances in miniaturization and increasing integration densities are a direct result of improved litho...
-
Chapter
GaAs Cantilever and Bridge Membrane-Like Structures Fully Compatible with AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs Based HFETs
Silicon (Si) based MicroElectroMechanical Systems (MEMS) are now a well understood and widely used in various integrated micromachined microsensors and microactuators. In relation to this, Gallium Arsenide (Ga...