Abstract
Silicon (Si) based MicroElectroMechanical Systems (MEMS) are now a well understood and widely used in various integrated micromachined microsensors and microactuators. In relation to this, Gallium Arsenide (GaAs) offers a number of material-related and technological advantages over Si. This paper is an attempt to demonstrate a high potential of GaAs based heterostructures for the development of a new generation of MEMS devices. There are 1 μtm-thick cantilever and bridge membrane-like structures fully compatible with both AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs based HFETs developed. The basic electro-thermo-mechanical properties of the micromechanical structures are investigated. A high electro-thermal conversion efficiency is studied in various ambient atmospheres. An internal mechanical stress induced in the micromechanical structures is evaluated to be admissible for their mechanical integrity and stability. This makes the structures very attractive for the design of new thermally based MEMS devices.
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Lalinsky, T. et al. (2002). GaAs Cantilever and Bridge Membrane-Like Structures Fully Compatible with AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs Based HFETs. In: Tay, F.E.H. (eds) Materials & Process Integration for MEMS. Microsystems, vol 9. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-5791-0_3
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DOI: https://doi.org/10.1007/978-1-4757-5791-0_3
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