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16 Result(s)

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  1. No Access

    Article

    “Magic” Nanostructures During the Early Stage of Thin Film Growth

    The behaviors of thin indium films in the early stage of growth are studied in situ by a novel ultra-sensitive thin film scanning calorimetry technique. The films consist of ensembles of self-assembled indium ...

    M. Zhang, M. Yu. Efremov, F. Schiettekatte, E. A. Olson… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    In situ transmission electron microscopy studies enabled by microelectromechanical system technology

    We have designed and fabricated a standardized specimen holder that allows the operation of a microelectromechanical system (MEMS) device inside a transmission electron microscope (TEM). The details of the des...

    M. Zhang, E. A. Olson, R. D. Twesten, J. G. Wen… in Journal of Materials Research (2005)

  3. No Access

    Article

    An Ultrafast Thin-Film Microcalorimeter with Monola Yer Sensitivity (J/m2)

    We introduce a high-sensitivity (∼1 J/m2) scanning microcalorimeter that can be used to perform direct calorimetric measurements on thin film samples at ultrafast heating rate (∼104 °C/s). This novel microcalorim...

    S. L. Lai, P. Infante, G. Ramanath, L. H. Allen in MRS Online Proceedings Library (1995)

  4. No Access

    Article

    Evolution of Microstructure During Low-Temperature Solid Phase Epitaxial Growth of SiξGe1-ξ on Si(001)

    The evolution of microstructure during Au-mediated solid phase epitaxial growth of a SiGe alloy film on Si(001) (c-Si) was investigated by in situ resistance measurements, X-ray diffraction, conventional and high...

    G. Ramanath, H. Z. **ao, S. L. Lai, Z. Ma, L. H. Allen in MRS Online Proceedings Library (1994)

  5. No Access

    Article

    Reaction Rate Kinetics and Film Textures of Palladium Silicide Formed on Hydrogenated Amorphous Silicon

    The reaction rate kinetics of the thin film solid-state reaction between 120 nm of Pd and 100 or 300 nm of a-Si:H(18at%) to form Pd2Si were studied in situ using x-ray diffraction and four-point probe resistivity...

    N. R. Manning, Haydn Chen, J. R. Abelson, L. H. Allen in MRS Online Proceedings Library (1993)

  6. No Access

    Article

    Nanocrystalline SiC Formation From Sputter-Deposited Non-Equilibrium a-SixC1-x Alloys

    There exists considerable interest in the synthesis of nanocrystalline SiC particles embedded in an a-SixC1-x:H matrix. This study investigated the formation of nanocrystalline SiC by annealing a non-equilibrium ...

    Hong Wang, Z. Ma, L. H. Allen, J. M. Rigsbee in MRS Online Proceedings Library (1993)

  7. No Access

    Article

    Wafer Bonding for Hybrid Circuit Technology Using Solid-State Reactions

    In this study, we report a new wafer bonding technique for the integration of GaAs- and InP-based optical devices with prefabricated Si electronic devices in hybrid circuit technology. This technique uses a Au...

    Z. Ma, G.L. Zhou, T.C. Shen, M.E. Lin, K.C. Hsieh… in MRS Online Proceedings Library (1993)

  8. No Access

    Article

    Formation of TiSi2 During Rapid Thermal Annealing: In Situ Resistance Measurements at Heating Rates From 1°C/S to 100°C/S.

    In VLSI technology, there is interest in monitoring the sequence of phase formation of TiSi2 (c-Ti ⇒ a-TiSi ⇒ C49 TiSb2 ⇒ C54 TiSi2), with the prospect of reducing the temperature of formation of the stable C54 T...

    Ramanath Ganapathiraman, S. Koh, Z. Ma, L. H. Allen… in MRS Online Proceedings Library (1993)

  9. No Access

    Article

    Kinetics and Mechanism of the C49 to C54 Titanium Disilicide Polymorphic Transformation

    The kinetics and mechanism of the C49 to C54 TiSi2 polymorphic transformation have been investigated in a temperature range from 660 to 720 °C using in situ sheet resistance measurement and transmission electron ...

    Z. Ma, G. Ramanath, L.H. Allen in MRS Online Proceedings Library (1993)

  10. No Access

    Article

    Initial Growth of Metastable Titanium Disilicide at Amorphous Silicide/Crystalline Silicon Interface

    Initial stage of growth of metastable titanium disilicide (C49-TiSi2) was investigated by annealing Ti/doped polycrystalline Si bilayers deposited on oxidized Si wafers at 530°C and at a constant heating rate of ...

    Z. Ma, L. H. Allen, S. Lee in MRS Online Proceedings Library (1992)

  11. No Access

    Article

    CO-Sputtered Composite films Of YBa2Cu3O7-xand LaAIO3

    We have grown thin film composites of and YBa2Cu3O7-x and LaAlO3 by co-sputtering. A film with composition of 10% LaAIO3 by volume had a transition temperature of 58K and critical current density of 1.2 x 106 A/c...

    L. H. Allen, E. J. Cukauskas, G. K. Sherrill, R. T. Holm in MRS Online Proceedings Library (1992)

  12. No Access

    Article

    Interdiffusion and Phase Relations in Ti-Aluminide/NB/Ti-Aluminide Composite Structures

    We have studied interdiffusion and phase relations in two titanium aluminide/Nb/titanium aluminide composite structures at 1100 °C using solid state diffusion approach. The composite structures were prepared w...

    Z. Ma, M. A. Dayananda, L. H. Allen in MRS Online Proceedings Library (1992)

  13. No Access

    Article

    Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

    Solid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dy...

    Z. Ma, L. H. Allen in MRS Online Proceedings Library (1992)

  14. No Access

    Article

    Interfacial Reactions between In/Pd and GaAs

    Interfacial microstructure of In/Pd ohmic contacts to n-GaAs was studied by various X-ray diffraction techniques and secondary ion mass spectroscopy (SIMS). Analysis of this interface after various annealing s...

    Z. Ma, L. H. Allen, B. Blanpain, Q. Z. Hong, J. W. Mayer… in MRS Online Proceedings Library (1992)

  15. No Access

    Article

    In-Situ Studies of the Formation Sequence of Silicides During Vacuum (10-7 TORR) Thermal Annealing of TI/Polysilicon Bilayers

    The formation of suicides during the thermal reaction of Ti/polysilicon bilayers has been investigated using both in-stu four point sheet resistance measurements and ex-situ measurements including X-ray diffra...

    Z. Ma, L. H. Allen, S. Lee in MRS Online Proceedings Library (1991)

  16. No Access

    Article

    The Effect of Hydrogenated Amorphous Silicon on the Formation Rate Kinetics and Crystallography of Palladium Slicide Films

    Samples of crystalline (111) silicon were coated with various thicknesses of hydrogenated amorphous silicon (a-Si:H), then coated with 100 nm of palladium. These samples were then reacted to form Pd2Si in vacuum....

    N. R. Manning, Haydn Chen, J. R. Abelson, L. H. Allen in MRS Online Proceedings Library (1991)