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    Article

    SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes

    The Mg do** profiles in close proximity to the (AlGaIn)N/GaN QW active region of group III-nitride light-emitting diodes grown by low pressure metal-organic vapor-phase epitaxy on sapphire substrates were in...

    Lutz Kirste, Klaus Köhler, Manfred Maier… in Journal of Materials Science: Materials in… (2008)

  2. Article

    Implantation Studies on Silicon-Doped GaN

    Silicon-doped GaN layers grown by low-pressure metalorganic vapor-phase epitaxy with Si concentrations ranging from 2 × 1017 Si/cm3 to 9.2 × 1018 Si/cm3 were investigated by means of the perturbed angular correla...

    Ronnie Simon, Reiner Vianden, Klaus Köhler in Journal of Electronic Materials (2013)

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