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Implantation Studies on Silicon-Doped GaN
Silicon-doped GaN layers grown by low-pressure metalorganic vapor-phase epitaxy with Si concentrations ranging from 2 × 1017 Si/cm3 to 9.2 × 1018 Si/cm3 were investigated by means of the perturbed angular correla...
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Article
SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
The Mg do** profiles in close proximity to the (AlGaIn)N/GaN QW active region of group III-nitride light-emitting diodes grown by low pressure metal-organic vapor-phase epitaxy on sapphire substrates were in...