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  1. No Access

    Article

    Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE

    Selective area growth (SAG) of a-plane GaN grown on r-plane sapphire with a stripe orientation along <1-100> was investigated. The key technology of facet-control is optimizing the growth temperature and the r...

    Bei Ma, Reina Miyagawa, Hideto Miyake, Kazumasa Hiramatsu in MRS Online Proceedings Library (2020)

  2. No Access

    Article

    Growth of High Quality c-plane AlN on a-plane Sapphire

    c-plane (0001) AlN layers were grown on sapphire (11-20) and (0001) substrates by hydride vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE), respectively. The growth temperatures were ad...

    Reina Miyagawa, Jiejun Wu, Hideto Miyake… in MRS Online Proceedings Library (2020)

  3. No Access

    Article

    Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

    A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growt...

    Hideto Miyake, Motoo Yamaguchi, Masahiro Haino… in MRS Online Proceedings Library (2012)

  4. No Access

    Article

    Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN Using Tungsten Mask

    Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selec...

    Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE)

    Ambient gas effect on the epitaxial lateral overgrowth (ELO) of GaN via metalorganic vapor-phase epitaxy (MOVPE) on a MOVPE-grown GaN (0001) / sapphire (0001) substrate with a SiO2 stripe mask has been studied by...

    Kazuyuki Tadatomo, Yoichiro Ohuchi, Hiroaki Okagawa… in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate

    GaN ultraviolet (UV) detectors were fabricated on a freestanding GaN substrate with low dislocation density. The resulting dark current density was below 1 nA/cm-2 at -8 V reverse bias, which was about 3 order...

    Yasuhiro Shibata, Atsushi Motogaito, Hideto Miyake… in MRS Online Proceedings Library (2004)

  7. No Access

    Article

    Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer

    A method for making AlGaN with a high AlN molar fraction and low dislocation density is needed for fabricating deep ultraviolet emitters and detectors. In this study, we reduced the dislocation density in AlGa...

    Akira Ishiga, Takashi Onishi, Yuhuai Liu… in MRS Online Proceedings Library (2004)

  8. No Access

    Article

    Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

    Characterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivi...

    Atsushi Motogaito, Kazumasa Hiramatsu, Yasuhiro Shibata… in MRS Online Proceedings Library (2003)

  9. No Access

    Article

    New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth

    We demonstrate high-quality epitaxial AlN films on C-plane sapphire as a new buffer layer technique for the growth of high-quality GaN. The obtained GaN films were atomically flat and the full width at half ma...

    Tomohiko Shibata, Yoshihiro Kida, Hideto Miyake… in MRS Online Proceedings Library (2001)

  10. No Access

    Article

    Characterization of high-quality epitaxial AlN films grown by MOVPE

    This paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic va...

    Tomohiko Shibata, Keiichiro Asai, Teruyo Nagai… in MRS Online Proceedings Library (2001)

  11. No Access

    Article

    Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

    Characterization of Schottky barrier UV detectors with a comb-shaped electrode and a transparent electrode for VUV region using synchrotron radiation was carried out. These Schottky type detectors are effectiv...

    Atsushi Motogaito, Keiichi Ohta, Kazumasa Hiramatsu… in MRS Online Proceedings Library (2001)

  12. No Access

    Article

    Effect of Ge in Cl2 Plasma for Reactive Ion Etching of GaN

    We investigated the effect of Ge and Si in Cl2 plasma on reactive ion etching (RIE) of GaN. The etched surfaces of GaN were smooth, and high etch rates of 0.63 μm/min and 0.41 μm/min were obtained using a Ge plat...

    Tatsuhiro Urushido, Harumasa Yoshida, Hideto Miyake… in MRS Online Proceedings Library (2001)

  13. No Access

    Article

    Review of Facet Controlled Epitaxial Lateral Overgrowth (FACELO) of GaN via Low Pressure Vapor Phase Epitaxy

    Facet structures of GaN grown by epitaxial lateral overgrowth (ELO) via low pressure-metalorganic vapor phase epitaxy (LP-MOVPE) are controlled by growth conditions such as reactor pressure and growth temperat...

    Kazumasa Hiramatsu, Hideto Miyake in MRS Online Proceedings Library (2001)

  14. No Access

    Article

    TEM Analysis of Threading Dislocations in ELO-GaN Grown with Controlled Facet Planes

    Cross sectional transmission electron microscope (TEM) observation has been performed for specimens of ELO-GaN (ELO: epitaxial-lateral-overgrowth) in order to analyze the behavior of dislocations, with special...

    Noriyuki Kuwano, Kayo Horibuchi, Hideto Miyake… in MRS Online Proceedings Library (2001)

  15. Article

    Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

    A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growt...

    Hideto Miyake, Motoo Yamaguchi… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (160 KB) View Article

  16. Article

    Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN VIA Metalorganic Vapor-Phase Epitaxy (Movpe)

    Ambient gas effect on the epitaxial lateral overgrowth (ELO) of GaN via metalorganic vapor-phase epitaxy (MOVPE) on a MOVPE-grown GaN (0001) / sapphire (0001) substrate with a SiO2 stripe mask has been studied by...

    Kazuyuki Tadatomo, Yoichiro Ohuchi… in MRS Internet Journal of Nitride Semiconduc… (1999)

    Download PDF (169 KB) View Article

  17. Article

    Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask

    Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selec...

    Yasutoshi Kawaguchi, Shingo Nambu… in MRS Internet Journal of Nitride Semiconduc… (1999)

    Download PDF (264 KB) View Article

  18. No Access

    Article

    The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

    InGaN has been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy (MOVPE) and “the composition pulling effect” at the initial growth stage of InGaN has been studied in relation to the ...

    Yasutoshi Kawaguchi, Masaya Shimizu, Kazumasa Hiramatsu… in MRS Online Proceedings Library (1996)

  19. No Access

    Article

    Facets Formation Mechanism of GaN Hexagonal Pyramids on Dot-Patterns via Selective MOVPE

    Three-dimensional GaN pyramids have been successfully obtained on dot-patterned GaN(0001)/sapphire substrates by using the selective MOVPE technique. The dot-pattern is a hexagon arranged with a 5μm width and ...

    Kazumasa Hiramatsu, Shota Kitamura, Nobuhiko Sawaki in MRS Online Proceedings Library (1995)