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  1. No Access

    Article

    Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

    A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growt...

    Hideto Miyake, Motoo Yamaguchi, Masahiro Haino… in MRS Online Proceedings Library (2012)

  2. No Access

    Article

    Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN Using Tungsten Mask

    Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selec...

    Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone… in MRS Online Proceedings Library (2011)

  3. Article

    Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

    A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growt...

    Hideto Miyake, Motoo Yamaguchi… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (160 KB) View Article

  4. Article

    Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask

    Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selec...

    Yasutoshi Kawaguchi, Shingo Nambu… in MRS Internet Journal of Nitride Semiconduc… (1999)

    Download PDF (264 KB) View Article