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  1. No Access

    Article

    Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

    The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck pow...

    Hyun Cho, Y. B. Hahn, D. C. Hays, K. B. Jung… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Dry Etching of MRAM Structures

    A wide variety of GMR and CMR materials have been patterned by high density plasma etching in both corrosive (Cl2-based) and non-corrosive (CO/NH3) plasma chemistries. The former produce much higher etch rates bu...

    S. J. Pearton, H. Cho, K. B. Jung, J. R. Childress… in MRS Online Proceedings Library (2000)

  3. No Access

    Article

    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs

    High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both p...

    Y. B. Hahn, D. C. Hays, H. Cho, K. B. Jung… in Plasma Chemistry and Plasma Processing (2000)

  4. No Access

    Article

    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs

    A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 for InP, 3.6 for InSb, 2.3 for ...

    Y. B. Hahn, D. C. Hays, H. Cho, K. B. Jung… in Plasma Chemistry and Plasma Processing (2000)

  5. No Access

    Chapter

    Dry Etching of Magnetic Materials

    In computer and data processing systems the main form of data storage and retrieval is based on magnetic recording systems, either magnetic disks or tape drives [1–12]. Information is written and stored as magnet...

    K. B. Jung, H. Cho, S. J. Pearton in Handbook of Advanced Plasma Processing Techniques (2000)

  6. No Access

    Article

    High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

    High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (...

    K. P. Lee, K. B. Jung, A. Srivastava, D. Kumar… in MRS Online Proceedings Library (1999)

  7. No Access

    Article

    Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems

    Selective etching of InN over GaN and AlN, and of GaAs over both AlGaAs and InGaP was examined with a number of different plasma chemistries under inductively coupled plasma conditions. Selectivities up to 55 ...

    D. C. Hays, C. R. Abernathy, W. S. Hobson, S. J. Pearton… in MRS Online Proceedings Library (1999)

  8. No Access

    Article

    Dry Etching to form Submicron Features in CMR Oxides: (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3

    Effective pattern transfer into (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3 has been achieved using Cl2/Ar discharges operated under Inductively Coupled Plasma conditions. Etch rates up to 900 Å-min−1 for (La,Sr)MnO3 and 300 ...

    K. P. Lee, K. B. Jung, H. Cho, D. Kumar… in MRS Online Proceedings Library (1999)

  9. No Access

    Article

    Ion-Enhanced Dry Etching of Magnetic Multilayers: Post-Etch Cleaning and Effects of UV Illumination

    Patterning of magnetic multilayer structures of the type used for MRAMs (e.g. NiFeCo/CoFe/Cu/CoFe/NiFeCo) is generally performed with ion milling, but this can degrade the coercivity of small (micron-size) MRA...

    H. Cho, K. P. Lee, K. B. Jung, F. Sharifi, J. Marburger… in MRS Online Proceedings Library (1999)

  10. Article

    Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He

    The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck pow...

    Hyun Cho, Y.B. Hahn, D.C. Hays, K.B. Jung… in MRS Internet Journal of Nitride Semiconduc… (1999)

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  11. No Access

    Article

    Plasma chemistries for high density plasma etching of SiC

    A variety of different plasma chemistries, including SF6, Cl2, ICl, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resona...

    J. Hong, R. J. Shul, L. Zhang, L. F. Lester, H. Cho… in Journal of Electronic Materials (1999)

  12. Article

    300°C GaN/AlGaN Heterojunction Bipolar Transistor

    A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated ...

    Fan Ren, Cammy R. Abernathy, J. M. Van Hove… in MRS Internet Journal of Nitride Semiconduc… (1998)

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  13. No Access

    Article

    Plasma chemistries for dry etching of NiFe and NiFeCo

    Plasma chemistries based on chlorine, bromine, or iodine have been investigated for inductively coupled plasma etching of NiFe and NiFeCo. There is clear evidence of a chemically enhanced etch mechanism with b...

    K. B. Jung, J. Hong, H. Cho, J. R. Childress… in Journal of Electronic Materials (1998)

  14. No Access

    Article

    Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications

    Dry etching of multilayer magnetic thin film materials is necessary for the development of sensitive magnetic field sensors and memory devices. The use of high ion density electron cyclotron resonance (ECR) pl...

    K. B. Jung, J. W. Lee, Y. D. Park, J. R. Childress… in Journal of Electronic Materials (1997)