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High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3

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Abstract

High density plasma etching of (Ba,Sr)TiO3 (BST) and LaNiO3 (LNO) thin films was performed in two different plasma chemistries, Cl2/Ar and CH4/H2/Ar. While the latter chemistry produced extremely low etch rates (≤ 100 Å-min−1) under all conditions, the Cl2/Ar produced a smooth anisotropic pattern transfer. The etching was still strongly ion-assisted, but maximum removal rates of ∼900 Å min−1 for both materials were achieved with selectivities of ∼16 for BST and ∼7 for LNO over Si. A single layer of thick (∼7 μm) photoresist is an effective mask under these conditions.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    K. P. Lee, K. B. Jung, A. Srivastava, D. Kumar, R. K. Singh & S. J. Pearton

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  1. K. P. Lee
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  2. K. B. Jung
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  3. A. Srivastava
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  4. D. Kumar
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  6. S. J. Pearton
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Lee, K.P., Jung, K.B., Srivastava, A. et al. High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3. MRS Online Proceedings Library 596, 91–96 (1999). https://doi.org/10.1557/PROC-596-91

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