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    Photoinduced Changes in the Charge States of Native Donors and Acceptors in ZnGeP2

    Bulk ZnGeP2 (ZGP) crystals grown for high-power tunable mid-infrared laser systems contain large concentrations of three native defects. Using EPR, these three defects have been identified as the Zn vacancy (an a...

    K. T. Stevens, S. D. Setzler, P. G. Schunemann… in MRS Online Proceedings Library (2000)

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    Article

    Temperature Dependent Hall Measurements on CdGeAs2

    Seventeen samples of CdGeAs2 have been extensively characterized by temperature-dependent Hall effect and resistivity measurements. Due to the anisotropic nature of the electrical properties, carefully matched sa...

    A. J. Ptak, S. Jain, K. T. Stevens, T. H. Myers… in MRS Online Proceedings Library (2000)

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    Article

    Photoluminescence and EPR of Phosphorus Vacancies in ZnGep2

    Zinc germanium diphosphide (ZnGeP2) is a nonlinear optical material used in mid-infrared optical parametric oscillators. The near-infrared photoluminescence (PL) from single crystals of bulk ZnGeP2 has been studi...

    M. Moldovan, K. T. Stevens, L. E. Halliburton… in MRS Online Proceedings Library (2000)

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    Article

    Electron-Nuclear Double Resonance Study of the Zinc Vacancy in Zinc GERMANIUM PHOSPHIDE (ZnGeP2)

    As-grown crystals of ZnGeP2 are highly compensated and contain significant concentrations of donors and acceptors. The dominant acceptor in ZnGeP2 is believed to be the zinc vacancy. This center is paramagnetic i...

    K. T. Stevens, S. D. Setzler, L. E. Halliburton… in MRS Online Proceedings Library (1997)