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  1. No Access

    Article

    Investigating the Electron–Phonon Coupling of Molecular Beam Epitaxy-Grown Hg1−xCdxSe Semiconductor Alloys

    Using spectroscopic ellipsometry, the temperature-dependence of the dielectric functions of a series of Hg1−xCdxSe thin films deposited on both ZnTe/Si(112) and GaSb(112) substrates were investigated. Initially, ...

    F. C. Peiris, M. V. Lewis, G. Brill, Kevin Doyle… in Journal of Electronic Materials (2018)

  2. No Access

    Article

    Iodine Do** of CdTe and CdMgTe for Photovoltaic Applications

    Iodine-doped CdTe and Cd1−x Mg x Te layers were grown by molecular beam epitaxy. Secondary ion mass spectrometry characterization was used to measure dopa...

    O. S. Ogedengbe, C. H. Swartz, P. A. R. D. Jayathilaka… in Journal of Electronic Materials (2017)

  3. No Access

    Article

    Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

    Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type ...

    S. Sohal, M. Edirisooriya, O. S. Ogedengbe… in Journal of Electronic Materials (2017)

  4. No Access

    Article

    Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

    The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd1−x Mg x Te barrier layers using a combination of c...

    E. G. LeBlanc, M. Edirisooriya, O. S. Ogedengbe… in Journal of Electronic Materials (2017)

  5. No Access

    Article

    The Effect of Anisotropic Valleys on Phonon Scattering and the Magnetotransport Properties of n-Type PbTe

    The success of PbTe as a thermoelectric material has generated growing interest in its charge carrier transport properties. The Boltzmann transport equation (BTE) is solved in a way which takes anisotropy, non...

    C. H. Swartz, J. E. Petersen, E. W. Welch, T. H. Myers in Journal of Electronic Materials (2016)

  6. No Access

    Article

    Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates

    Cross-section electron micrographs, cathodoluminescence images, and confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B an...

    J. Chai, O. C. Noriega, A. Dedigama, J. J. Kim… in Journal of Electronic Materials (2013)

  7. No Access

    Article

    Critical Thickness of ZnTe on GaSb(211)B

    An important parameter for heteroepitaxial material systems is the critical thickness h c. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of h

    J. Chai, O. C. Noriega, J. H. Dinan, T. H. Myers in Journal of Electronic Materials (2012)

  8. No Access

    Article

    Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb

    A key issue with the current HgCdTe/Si system is the high dislocation density due to the large mismatch between HgCdTe and Si. An alternative system that has superior lattice matching is HgCdSe/GaSb. A buffer ...

    J. Chai, K.-K. Lee, K. Doyle, J.H. Dinan, T.H. Myers in Journal of Electronic Materials (2012)

  9. No Access

    Article

    Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources

    Evidence is presented that nitrogen plasma sources utilizing a pyrolytic boron nitride liner may be a significant source of B contamination during growth and processing. Auger electron spectroscopy analysis pe...

    A. J. Ptak, K. S. Ziemer, L. J. Holbert… in MRS Online Proceedings Library (2012)

  10. No Access

    Article

    High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy

    High-temperature (high-T) illumination-induced metastability in undoped semi-insulating (SI) GaN grown on a-plane sapphire by metalorganic vapor phase epitaxy has been studied using thermally stimulated curren...

    Z-Q. Fang, B. B. Claflin, D. C. Look, T. H. Myers… in MRS Online Proceedings Library (2011)

  11. No Access

    Article

    Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire

    The operating regimes of two rf-plasma sources, an Oxford CARS-25 and an EPI Unibulb, have been extensively characterized. By changing the exit aperture configuration and using an electrostatic deflector, the ...

    A. J. Ptak, K. S. Ziemer, M. R. Millecchia… in MRS Online Proceedings Library (2011)

  12. No Access

    Article

    Identification of a Deep Acceptor Level in ZnO Due to Silver Do**

    There remains considerable interest in the behavior of acceptors in ZnO, the ultimate goal being the realization of device grade p-type material. Silver is a candidate acceptor, and, in this study, in situ do**...

    J. Chai, R. J. Mendelsberg, R. J. Reeves, J. Kennedy… in Journal of Electronic Materials (2010)

  13. No Access

    Article

    GaN Photonic Crystal-Based, Enhanced Fluorescence Biomolecule Detection System

    The need for small form factor, portable biosensing platforms is prevalent across a wide range of medical, environmental, and defense applications. This paper presents the design of a novel, integrated optoflu...

    J. M. Dawson, J. R. Nightingale, R. P. Tompkins, X. Cao… in MRS Online Proceedings Library (2008)

  14. No Access

    Article

    The Use of Cathodoluminescence during Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate Temperature

    In-situ cathodoluminescence (CL) measurement during growth of gallium nitride (GaN) by molecular beam epitaxy (MBE) was investigated for determining substrate temperature. Cathodoluminescence was easily observ...

    K. Lee, T.H. Myers in Journal of Electronic Materials (2007)

  15. No Access

    Article

    Effect of annealing on the morphology and optoelectrical characteristics of ZnO thin films grown by plasma-assisted molecular beam epitaxy

    The dependence of characteristics of plasma-assisted molecular beam epitaxy-grown ZnO thin films on different postgrowth annealing conditions was investigated. It was found that, under oxygen atmosphere, annea...

    W. C. T. Lee, M. Henseler, P. Miller, C. H. Swartz… in Journal of Electronic Materials (2006)

  16. No Access

    Article

    Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy

    Variable magnetic field Hall and transient photoconductance lifetime measurements were performed on a series of undoped, In-doped, and As-doped HgCdTe samples grown by molecular beam epitaxy and metalorganic c...

    C. H. Swartz, S. Chandril, R. P. Tompkins, N. C. Giles… in Journal of Electronic Materials (2006)

  17. No Access

    Article

    Changes in Optical Properties of GaAsN During Annealing

    GaAs1−xNx layers and quantum dot-like structures were grown on (100) GaAs substrates by molecular beam epitaxy. The dependence of photoluminescence emission spectra on annealing temperature is consistent with lit...

    Ting Liu, S. Chandril, E. D. Schires, N. Wu, **nqi Chen… in MRS Online Proceedings Library (2006)

  18. No Access

    Article

    In-Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS

    Reflection high-energy electron diffraction total-reflection-angle x-ray spectroscopy (RHEED-TRAXS) uses high-energy electrons from RHEED to excite x-ray fluorescence. Monitoring characteristic x-rays of selec...

    R.P. Tompkins, B. L. VanMil, E. D. Schires, K. Lee… in MRS Online Proceedings Library (2005)

  19. No Access

    Article

    The Use of Cathodoluminescence in Gallium Nitride During Growth to Determine Substrate Temperature

    Cathodoluminescence measurements made during the growth of GaN films represent an alternate method of substrate temperature determination. The wavelength corresponding to a given growth temperature can be dete...

    K. Lee, E. D. Schires, T. H. Myers in MRS Online Proceedings Library (2005)

  20. No Access

    Article

    Compensation in Be-doped Gallium Nitride Grown Using Molecular Beam Epitaxy

    Three techniques to improve beryllium do** in Ga-polar GaN grown by molecular beam epitaxy were investigated: growth under atomic hydrogen, growth under electron irradiation, and growth under an In flux. The...

    K. Lee, B. VanMil, M. Luo, T. H. Myers, A. Armstrong… in MRS Online Proceedings Library (2005)

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