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    LT-GaAs with high breakdown strength at low temperature for power MISFET applications

    Low temperature grown GaAs has been fabricated containing a limited amount of excess arsenic. The material has a low conductivity in the order of 100KΩ cm, due to hop** in a deep donor band. This σ-LT-GaAs w...

    K. -M. Lipka, B. Splingart, D. Theron, J. K. Luo… in Journal of Electronic Materials (1995)