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Article
The Effect of SiGe Barriers on the Thermal Stability of Highly B-Doped Si Surface Layers
We have investigated the use of low-temperature (320 oC) molecular-beam epitaxy (MBE) to form highly conductive, p+, ultra-shallow layers in Si. Although the as-grown B-doped Si is electrically active, in a pract...
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Article
Effect of Fluorine on the Diffusion of Boron in Amorphous Silicon
Fluorine and boron co-implantation within amorphous silicon has been studied in order to meet the process challenges regarding p+ ultra-shallow junction formation. Previous experiments have shown that fluorine ca...
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Article
Metrology Study of Sub 20Å Oxynitride by Corona-Oxide-Silicon (COS) and Conventional C-V Approaches
This work aims to develop an in-line corona-oxide-silicon (COS) monitoring strategy for the sub 20 Å oxynitride gate dielectrics. The oxynitride gate dielectrics were composed of In-Situ Steam Generated oxide (IS...
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Article
The Use of SiGe Barriers During the Formation of p+ Shallow Junctions by Ion Implantation
Ultra-shallow p+ junctions are required for next generation electronics. We present a technique for the formation of ultra-shallow p+ junctions that increases the thermal stability of the junctions formed by ion ...
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Article
Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing
The redistribution of nitrogen from silicon to the Si-SiO2 interface due to thermal processing is investigated by Secondary Ion Mass Spectroscopy (SIMS) using Metal-Oxide-Semiconductor (MOS) capacitors. SIMS prof...